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首页> 外文期刊>The journal of physics and chemistry of solids >Momentum-resolved charge excitations in high-T-c cuprates studied by resonant inelastic X-ray scattering
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Momentum-resolved charge excitations in high-T-c cuprates studied by resonant inelastic X-ray scattering

机译:通过共振非弹性X射线散射研究高T-c铜酸盐中动量分辨的电荷激发

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We report a Cu K-edge resonant inelastic X-ray scattering (RIXS) study of high-T-c cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [pi, pi] direction than the [pi, 0] direction. On the other hand, the resonance condition displays material dependence. The Mott gap persists in carrier-doped states. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker associated with the reduction of antiferromagnetic Correlation and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer. (C) 2008 Elsevier Ltd. All rights reserved.
机译:我们报告了高T-c铜的Cu K边缘共振非弹性X射线散射(RIXS)研究。从母Mott绝缘体到载流子掺杂超导体,研究了CuO2平面上动量分辨的电荷激发。发现未掺杂绝缘体中的莫特间隙激励通常沿pi,pi方向显示比pi,0方向更大的色散。另一方面,共振条件显示出材料依赖性。莫特间隙在载流子掺杂状态下仍然存在。在空穴掺杂时,与反铁磁相关性的降低相关联,莫特间隙激发的色散变弱,并且带内激发以同时低于间隙的连续强度出现。在电子掺杂的情况下,莫特带隙激发在区域中心突出,并且在有限的动量传递下观察到色散带内激发。 (C)2008 Elsevier Ltd.保留所有权利。

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