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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >CdS/CdSe Co-Sensitized TiO2 Photoelectrode for Efficient Hydrogen Generation in a Photoelectrochemical Cell
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CdS/CdSe Co-Sensitized TiO2 Photoelectrode for Efficient Hydrogen Generation in a Photoelectrochemical Cell

机译:CdS / CdSe共敏化的TiO2光电极可在光电化学电池中高效产生氢气

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An efficient photoelectrode is prepared by sequentially assembled CdS and CdSe quantum dots (QDs) onto a nanocrystalline TiO2 film. The CdS/CdSe co-sensitized photoelectrode was found to have a complementary effect in the light absorption. Furthermore, the cascade structure, TiO2/CdS/CdSe, exhibits a significant enhancement in the current-voltage response, both in dark conditions and under light illumination. On the contrary, the performance of the reverse structure, TiO2/CdSe/CdS, is much less than the electrode using a single sensitizer. The open circuit potentials measured in the dark for these electrodes indicates that a Fermi level alignment occurs between CdS and CdSe after their contact, causing downward and upward shifts of the band edges, respectively, for CdS and CdSe. A stepwise band edge structure is, therefore, constructed in the TiO2/CdS/CdSe electrode, which is responsible for the performance enhancement of this photoelectrode. The saturated photocurrent achieved by the TiO2/CdS/CdSe electrode under the illumination of UV cutoff AM 1.5 (100 mW/cm~2) is 14.9 mA/cm~2, which is three times the value obtained by the TiO2/CdS and TiO2/CdSe electrode. When a ZnS layer is further deposited for passivating the QDs, the corresponding hydrogen evolution rate measured for the TiO2/CdS/CdSe/ZnS electrode is 220 μmol/(cm~2 h) (5.4mL/(cm~2 h)). This performance is presently the highest reported for the QD-sensitized photoelectrochemical cells.
机译:通过将CdS和CdSe量子点(QDs)依次组装到纳米TiO2薄膜上,可以制备出高效的光电极。发现CdS / CdSe共敏光电极在光吸收方面具有互补作用。此外,级联结构TiO2 / CdS / CdSe在黑暗条件下和光照下均表现出明显的电流-电压响应增强。相反,反向结构TiO2 / CdSe / CdS的性能远低于使用单一敏化剂的电极。这些电极在黑暗中测得的开路电势表明,在CdS和CdSe接触后,费米能级对准发生在CdS和CdSe之间,分别导致CdS和CdSe的能带边缘向下和向上移动。因此,在TiO2 / CdS / CdSe电极中构造了阶梯状的带状边缘结构,其负责增强该光电极的性能。 TiO2 / CdS / CdSe电极在UV截止AM 1.5(100 mW / cm〜2)的照射下获得的饱和光电流为14.9 mA / cm〜2,是TiO2 / CdS和TiO2所获得值的三倍。 / CdSe电极。当进一步沉积ZnS层以钝化QD时,测得的TiO2 / CdS / CdSe / ZnS电极相应的析氢速率为220μmol/(cm〜2 h)(5.4mL /(cm〜2 h))。该性能目前是QD敏化光电化学电池的最高记录。

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