Passivation of Metal Oxide Surfaces for High-Performance Organic and Hybrid Optoelectronic Devices

摘要

The exciton quenching properties of solutionprocessed nickel oxide (NiO) and vanadium oxide (VO) are studied by measuring the photoluminescence (PL) of a thin emitting layer (EML) deposited on top of the Metal oxides. Strong e-xciton quenching is evidenced at the metal oxide/EML interface, which is proved, to be detrimental to theYerformance, of optoelectronic.devides. With a thin, polyvinylpyrrolidone (PVP) passivation polymer adSorbed on top of rnetal xides, the PL quenching is found to be effectively suppressed: A short UV-O-3 treatment on top of the PVP-passivated metal oxides turns out to be a.key procedure to trigger the chemical binding between the PVP passivation polymer andthe,metal oxide surface species, which tutus out to be necessary for efficient hole injection and extraction for organic light emitting diodes (OLEDs) and solar cell devices, respectively. With the PVP passivation layer followed by UV-03 treatment, the QLEDs incorporating NiOx as a hole transport layer (HTL) shows a record current efficiency of 90.8 +/- 2.1 Cd A(-1) with significantly suppressed efficiency roll-off, the OLEDs incorporating VOx as a hole injection layer (HIL) also shows higher current efficiencies at higher luminescence. Both petovskite solar cells and polymer solar cells incorporating NiOx HTLs show a 60% enhancement in power conversion efficiency (PCE) With PVP passivation polymer.