Improving the Performance of Solution-Processed Cu2ZnSn(S,Se)(4) Photovoltaic Materials by Cd2+ Substitution

摘要

Additional elements in the Cu2ZnSn(S,Se)(4) (CZTSSe) absorber layers can play a crucial role in improving the performance of thin film solar cells. In this paper, a significant performance enhancement of CZTSSe thin film solar cells was achieved by the partial substitution of the Zn2+ cation with Cd2+. A small amount of Cd2+ can be successfully incorporated into the host lattice of CZTSSe to form a homogeneous Cu2Zn1-xCdxSn(S,Se)(4) (CZCTSSe) alloy material. We demonstrated that the crystal growth and the band gap of CZCTSSe thin films are affected by the Cd doping level. Additionally, the impact of Cd content on the space-charge density (Nc-v) and the depletion width (W-d) of CZCTSSe solar cells was systematically investigated. By this cation substitution approach, the power conversion efficiency of the solar cells based on the CZCTSSe absorber was successfully increased from 5.41 to 8.11% for the optimal composition (x = 5%).