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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Shape and Confinement Effects of Various Terminal Siloxane Groups on Supramolecular Interactions of Hydrogen-Bonded Bent-Core Liquid Crystals
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Shape and Confinement Effects of Various Terminal Siloxane Groups on Supramolecular Interactions of Hydrogen-Bonded Bent-Core Liquid Crystals

机译:各种末端硅氧烷基团的形状和约束作用对氢键合弯曲核心液晶的超分子相互作用的影响

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摘要

To investigate the shape and confinement effects of the terminal siloxane groups on the self-assembled behavior of molecular arrangements in hydrogen-bonded (H-bonded) bent-core complexes, four H-bonded bent-core complexes Si, P1, C4, and P8 with string-, ring-, and cagelike siloxane termini (i.e., linear siloxane unit -Si-O-Si-O-Si, cyclic siloxane unit (Si-O)(4), and silsesquioxane unit PUSS, respectively) were synthesized and investigated. By X-ray diffraction measurements, different types of SmCG (B8) phases and leaning angles were controlled by the shape effect of the string- and cage-like siloxane termini for Si and P1 (with only one arm of H-bonded bent-core), respectively. In addition, the confinement effect of Pi, C4, and P8 (accompanied by increasing the numbers of attached H-bonded bent-core arms) resulted in higher transition temperatures and the diminishing of mesophasic ranges (even the disappearance of mesophase in P8). Moreover, AFM images showed the bilayer smectic CG phases of Si and P1 were aligned to reveal highly ordered thread-like structures by a DC field. By spontaneous polarization measurements within the mesophasic ranges, Si and P1 showed ferroelectric transitions but C4 displayed antiferroelectricity. Finally, the electro-optical performance of B8 phases could be optimized through binary mixtures of Si and P1, and a well aligned modulated ribbon phase could be formed via specific molar ratios of the binary mixtures.
机译:为了研究末端硅氧烷基团的形状和约束效应对氢键合(H键合)弯曲核络合物,四个H键合弯核络合物Si,P1,C4和H中分子排列的自组装行为的影响合成了具有线状,环状和笼状硅氧烷末端的P8(分别是线性硅氧烷单元-Si-O-Si-O-Si,环状硅氧烷单元(Si-O)(4)和倍半硅氧烷单元PUSS)并进行调查。通过X射线衍射测量,可以通过线状和笼状硅氧烷末端对Si和P1的形状效应(只有一个H键合弯曲核的臂)来控制不同类型的SmCG(B8)相和倾斜角), 分别。此外,Pi,C4和P8的限制作用(伴随着增加的H键连接的弯曲核臂的数量)导致更高的转变温度和中间相范围的减小(甚至中间相在P8中消失)。此外,AFM图像显示Si和P1的双层近晶CG相对齐,从而通过DC场显示出高度有序的线状结构。通过在中间相范围内的自发极化测量,Si和P1显示出铁电跃迁,而C4显示出反铁电。最后,可以通过Si和P1的二元混合物优化B8相的电光性能,并且可以通过二元混合物的特定摩尔比形成排列良好的调制带相。

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