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首页> 外文期刊>The Journal of Chemical Physics >A FURTHER THEORETICAL EXPLORATION OF THE SURFACE-ALIGNED PHOTO-INITIATED H+CO2 REACTION - SURFACE MOTION AND TEMPERATURE DEPENDENCE
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A FURTHER THEORETICAL EXPLORATION OF THE SURFACE-ALIGNED PHOTO-INITIATED H+CO2 REACTION - SURFACE MOTION AND TEMPERATURE DEPENDENCE

机译:表面引发的光引发H + CO2反应的进一步理论探索-表面运动和温度依赖性

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We report a further theoretical investigation of a model surface-aligned photoreaction with a moving surface approximation, The reaction is initiated by the photodissociation of a well-aligned HBr adsorbed on the LiF(001) surface. The collision of the dissociating H fragment with a coadsorbed CO2 leads to the DH and CO products. In an earlier theoretical study with a static surface model, it has been shown that the reactivity can be significantly enhanced relative to the corresponding gas phase reaction for some adsorption alignments. In this work, we address the roles played by surface motion and temperature. Our results indicate that some (similar to 0.3 eV) energy can be lost to the surface either from the adsorbed HOCO complex or from one of the products when it collides with the surface during the final disintegration of the HOCO complex. However, the energy transfer has a minor effect on the reactivity. The final state distributions of the products are found to be similar to those produced with the static surface model. On the other hand, a significant temperature effect is predicted for one adsorbate configuration. Apparently, the lowering of temperature for a well-aligned system results in a more narrowly focused alignment and higher reactivity. (C) 1997 American Institute of Physics. [References: 40]
机译:我们报告进一步的理论研究模型表面对准的光反应与移动的表面近似,该反应是由吸附在LiF(001)表面的取向良好的HBr的光解离引发的。离解的H片段与共吸附的CO2的碰撞导致DH和CO产物。在较早的关于静态表面模型的理论研究中,已经表明,对于某些吸附排列,相对于相应的气相反应,反应活性可以得到显着提高。在这项工作中,我们解决了表面运动和温度所起的作用。我们的结果表明,在HOCO配合物最终分解过程中,吸附的HOCO配合物或其中一种产品与表面发生碰撞时,一部分能量(约0.3 eV)会从表面损失掉。但是,能量转移对反应性的影响很小。发现产品的最终状态分布与静态表面模型产生的状态分布相似。另一方面,对于一种吸附物构型,预计会有明显的温度效应。显然,对于良好排列的系统,降低温度会导致排列更窄的排列和更高的反应性。 (C)1997美国物理研究所。 [参考:40]

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