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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Novel single-source precursors approach to prepare highly uniform Bi2S3 and Sb2S3 nanorods via a solvothermal treatment
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Novel single-source precursors approach to prepare highly uniform Bi2S3 and Sb2S3 nanorods via a solvothermal treatment

机译:通过溶剂热处理制备高度均匀的Bi2S3和Sb2S3纳米棒的新型单源前体方法

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High-quality Bi2S3 and Sb2S3 nanorods on a large scale were successfully synthesized by the solvothermal treatment of a novel kind of single-source precursors (SSPs), metal di-n-octyl-dithiophosphates (M[S2P(OC8H17)(2)](3), M = Bi, Sb). The X-ray powder diffraction (XRD) patterns show that both of these products belong to the orthorhombic M2S3 phase. The experimental results show that the Bi2S3 nanorods can be easily prepared in air at >= 140 degrees C for 5 h in the presence of oleylamine. Transmission electron microscopy (TEM) images show the rodlike appearance of Bi2S3 with a diameter of 7-21 nm and length of several hundred nanometers under the various reaction conditions. The effects of reaction parameters, such as reaction time, temperature, and concentration of the precursor, on the growth of nanorods were discussed in detail. The mechanism of the formation process of the nanorods was proposed. We also demonstrate that this method can be extended to the synthesis of Sb2S3 nanorods, which have an average diameter in the range of 45 nm and a length in the range of 1 mu m. The optical absorption experiment shows that these nanorods are semiconductor with bandwidth E-g = 1.67 eV for Bi2S3 and 1.76 eV for Sb2S3, both near to the optimum for photovoltaic conversion, suggesting these nanorods could be used in solar energy and photoelectronic applications.
机译:通过新型单源前驱体(SSP)金属二正辛基二硫代磷酸酯(M [S2P(OC8H17)(2))的溶剂热处理成功大规模合成了高质量的Bi2S3和Sb2S3纳米棒。 (3),M = Bi,Sb)。 X射线粉末衍射(XRD)图谱表明这两种产物均属于正交晶M2S3相。实验结果表明,在油胺存在下,Bi2S3纳米棒可以在> = 140摄氏度的空气中轻松制备5 h。透射电子显微镜(TEM)图像显示在各种反应条件下,Bi2S3的棒状外观直径为7-21 nm,长度为几百纳米。详细讨论了反应参数(如反应时间,温度和前体浓度)对纳米棒生长的影响。提出了纳米棒形成过程的机理。我们还证明该方法可以扩展到Sb2S3纳米棒的合成,其平均直径在45 nm范围内,长度在1μm范围内。光吸收实验表明,这些纳米棒是半导体,Bi2S3的带宽E-g = 1.67 eV,Sb2S3的带宽E-g = 1.76 eV,两者均接近光伏转换的最佳值,表明这些纳米棒可用于太阳能和光电应用。

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