首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >A New Series of Chalcohalide Semiconductors with Composite CdBr2/Sb2Se3 Lattices:Synthesis and Characterization of CdSb2Se3Br2 and Indium Derivatives InSb2S4X(X=Cl and Br)and InM2Se4Br(M=Sb and Bi)
【24h】

A New Series of Chalcohalide Semiconductors with Composite CdBr2/Sb2Se3 Lattices:Synthesis and Characterization of CdSb2Se3Br2 and Indium Derivatives InSb2S4X(X=Cl and Br)and InM2Se4Br(M=Sb and Bi)

机译:一系列具有复合CdBr2 / Sb2Se3晶格的卤化半导体:CdSb2Se3Br2和铟衍生物InSb2S4X(X = Cl和Br)和InM2Se4Br(M = Sb和Bi)的合成和表征

获取原文
获取原文并翻译 | 示例
           

摘要

A new series of mixed-framework compounds in the chalcohalide family has been synthesized using the conventional solid-state reactions.These include CdSb2Se3Br2 1 and its isoelectronic indium derivatives InSb2S4X(X=Cl 2 and Br 3)and InM2Se4Br(M=Sb 4 and Bi 5).Single crystals were grown from direct interaction of stoichiometric mixtures of respective elemental and binary compounds.The parent compound cadmium antimony selenobromide,CdSb2Se3Br2,was synthesized by heating the stoichiometric mixture of CdBr2 and Sb and Se at 450°C followed by slow cooling.Single-crystal structure analysis was carried out by employing X-ray diffraction methods,showing that this compound crystallizes in the monoclinic crystal system(C2/m,No.12)with a=20.998(4)A,b=4.0260(8)A,c=12.149(2)A,beta.=.119.00(3)°,and V=898.3(3)A3.The framework exhibits mixed CdBr2 and Sb2Se3 sublattices,respectively,adopting the(110)and(100)NaCl-type structures.The former consists of dual octahedral chains of Cd-centered[CdBrsSe]units sharing cis Br edges,and the chains propagate along the b axis via sharing trans Br edges of the octahedra.The Sb2Se3 sublattice is made of three edge-shared[SbSe5]square-pyramidal units,features commonly seen in antimony and Sb-containing selenides.The apex selenium atoms of the aforementioned[CdBr5Se]unit are corner-shared with[SbSe5]sublattices to form a composite slab along the(-101)plane.The lone-pair electrons of Sb~(3+)cations point into the space between the stacked slabs.The indium derivatives 2-5 were synthesized by substituting the trivalent In~(3+)for divalent Cd~(2+)cations,along with a stoichiometric amount of charge-compensating halide anions.These four new In derivatives are isostructural with 1 and can be formulated as(InSX)(Sb2S3)(X=Cl and Br),and(InSeBr)(M2Se3)(M=Sb and Bi)with respect to the composite lattices of CdBr2 and Sb2Se3.The UV-vis reflectance spectroscopy and band structure calculations confirm that these compounds are semiconductors with steep band gap absorption edges around 1.1-1.8 eV.In light of the observed blue shift in the absorption edge with respect to the dimensionally reduced post-transition-metal chalcogenide M2Q3 sublattices,we claim quantum confinement effect of the optical band gap,which is the first example among inorganic mixed-anion compounds reported thus far.
机译:使用常规固相反应合成了一系列新的卤化family族混合骨架化合物,包括CdSb2Se3Br2 1及其等电子铟衍生物InSb2S4X(X = Cl 2和Br 3)和InM2Se4Br(M = Sb 4和Bi 5)。从各个元素和二元化合物的化学计量混合物的直接相互作用中生长出单晶。母体化合物硒化锑硒化镉,CdSb2Se3Br2,是通过在450°C下加热CdBr2和Sb和Se的化学计量混合物然后缓慢加热而合成的用X射线衍射法进行了单晶结构分析,表明该化合物在单斜晶系(C2 / m,No.12)中结晶,a = 20.998(4)A,b = 4.0260( 8)A,c = 12.149(2)A,β= .119.00(3)°,V = 898.3(3)A3。框架分别显示混合的CdBr2和Sb2Se3亚晶格,分别采用(110)和(100) NaCl型结构。前者由Cd中心[CdBrsSe]单元的双八面体链组成Sb2Se3亚晶格由三个边缘共享的[SbSe5]正方形-金字塔形单元组成,这些特征在锑和含Sb的硒化物中很常见,它们共享顺式Br边缘,并且链条通过共享八面体的反式Br边缘沿b轴传播。上述[CdBr5Se]单元的顶部硒原子与[SbSe5]亚晶格在角点处共享,沿(-101)平面形成复合平板。Sb〜(3+)阳离子的孤对电子指向通过用三价In〜(3+)取代二价Cd〜(2+)阳离子以及化学计量的电荷补偿卤化物阴离子,合成了铟衍生物2-5。相对于CdBr2和Sb2Se3的复合晶格,导数为1的同构结构,可以表示为(InSX)(Sb2S3)(X = Cl和Br)和(InSeBr)(M2Se3)(M = Sb和Bi)。紫外可见光谱和能带结构计算证实了这些化合物是具有陡峭带隙a的半导体吸收边在1.1-1.8 eV附近。鉴于观察到的吸收边相对于尺寸减小的过渡金属硫属元素化物M2Q3亚晶格的蓝移,我们主张光学带隙的量子约束效应,这是第一个示例迄今报道的无机混合阴离子化合物中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号