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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Illuminating Silicon Surface Hydrosilylation: An Unexpected Plurality of Mechanisms
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Illuminating Silicon Surface Hydrosilylation: An Unexpected Plurality of Mechanisms

机译:照明硅表面氢化硅烷化:意外的机制的多元化

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Silicon is the cornerstone material of the semiconductor industry. As feature sizes on chips continue to decrease in size, the ratio of surface to bulk increases, and as a result, the role of surface defects, surface slates and other subtle features play larger roles in the functioning of the device. Although silicon oxides have served the industry well as the passivation chemistry of choice, there is interest in expanding the repertoire of accessible and efficient chemical functional strategies available for use, and to fully understand the nature of these interfaces. For new applications such as molecular electronics on silicon and biochips, for example, there is a need to avoid the layer of intervening insulating oxide: A well-defined linkage of organic molecules through a silicon—carbon bond has great promise and appeal. Hydrosilylation, the insertion of an alkene or alkyne into a surface Si—H bond, is an ideal approach to producing these covalent Si-C bonds, and can be carried out in a number of ways. Light-promoted hydrosilylation is promising because it is clean and direct and can be patterned via masking; it requires no additional reagents such as catalysts or input of thermal energy and thus may have reduced surface contamination and numbers of defects. In this perspective, we start by making connections between the molecular silane literature, and the first reports of UV-mediated hydrosilylation of an alkene on a silicon surface, a reaction that was assumed to operate via a radical mechanism. We then describe the unexpected development of four new mechanisms that have no obvious parallels with the molecular silane literature, and take place as a result of the solid state electronics of the underlying silicon itself. From exciton involvement, to the influence of plasmonics, to the role of photocmission, the area of silicon surface hydrosilylation has become incredibly rich, and undoubtedly still contains new reactivity to be discovered.
机译:硅是半导体行业的基础材料。随着芯片上特征尺寸的不断减小,表面与体积的比率增加,结果,表面缺陷,表面板岩和其他细微特征的作用在器件的功能中发挥了更大的作用。尽管氧化硅已作为选择的钝化化学剂在行业中发挥了很好的作用,但人们仍希望扩大可使用的有效化学功能策略的种类,并充分了解这些界面的性质。例如,对于诸如硅和生物芯片上的分子电子学之类的新应用,有必要避免中间绝缘氧化物层:通过硅-碳键实现有机分子的明确定义的连接具有巨大的希望和吸引力。氢化硅烷化是将烯烃或炔烃插入表面Si-H键中,是产生这些共价Si-C键的理想方法,并且可以多种方式进行。光促进的氢化硅烷化是有前途的,因为它干净,直接并且可以通过掩膜形成图案。它不需要额外的试剂,例如催化剂或热能输入,因此可以减少表面污染和减少缺陷数量。从这个角度出发,我们首先建立分子硅烷文献之间的联系,以及有关硅表面上烯烃的紫外线介导的硅氢化反应的第一份报道,该反应被认为是通过自由基机理进行的。然后,我们描述了四种与分子硅烷文献没有明显相似之处的新机制的出乎意料的发展,并且这是底层硅本身的固态电子学的结果。从激子的参与,到等离子体激元的影响,再到光致发光的作用,硅表面氢化硅烷化的面积变得异常丰富,而且无疑仍具有新的反应性。

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