Cyclopropyl-containing Photoacid Generators for Chemcially Amplified Resists

摘要

several cyclopropyl-containing photoacid generators (PAGs) were synthesized in order to reduce absorbnce at 193 nm and induce the photobleaching effect.From the GC-mass experiment,cleavage of S-C(cyclopropyl)which is more preferential than that of S-C(phenyl)results in photobleaching effect.The resist containing cyclopropydiphenylsulfonium trflate gave beter resolution than the resist containing the conventional PAG,triphenylsulfonium triflate.