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首页> 外文期刊>The European physical journal, B. Condensed matter physics >High-field interlayer tunnelling transport in layered cuprates: Uncovering the pseudogap state
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High-field interlayer tunnelling transport in layered cuprates: Uncovering the pseudogap state

机译:分层铜酸盐中的高场层间隧道传输:揭示伪间隙状态

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摘要

In high temperature (high T-c) cuprate superconductors the gap in the electronic density of states is not fully filled at T-c ; it evolves into a partial (pseudo)gap that survives way beyond T-c , challenging the conventional views. We have investigated the pseudogap phenomenon in the field-temperature (H-T) diagram of Bi2Sr2CaCu2O8+y over a wide range of hole doping (0.10less than or equal topless than or equal to0.225). Using interlayer tunneling transport in magnetic fields up to 60 T to probe the density-of states (DOS) depletion at low excitation energies we mapped the pseudogap closing field H-pg . We found that H-pg and the pseudogap onset temperature T*supercript stop are related via a Zeeman relation gmu(B)H(pg)approximate tok(B)T*, irrespective of whether the magnetic field is applied along the c-axis or parallel to CuO2 planes. In contrast to large anisotropy of the superconducting state, the field anisotropy of H-pg is due solely to the g-factor. Our findings indicate that the pseudogap is of singlet-spin origin, consistent with models based on doped Mott insulator.
机译:在高温(高T-c)的铜酸盐超导体中,在T-c时电子态密度的缺口没有完全填充。它演变成部分(伪)间隙,可以在T-c之外生存,挑战了传统观点。我们已经在Bi2Sr2CaCu2O8 + y的大范围空穴掺杂(0.10小于等于等于裸照等于0.225)的场温度(H-T)图中研究了伪间隙现象。在不超过60 T的磁场中使用层间隧穿传输来探测低激发能下的态密度(DOS)耗尽,我们绘制了伪间隙闭合场H-pg。我们发现,无论是否沿c轴施加磁场,H-pg和伪间隙起始温度T *超临界停止都通过塞曼关系gmu(B)H(pg)近似tok(B)T *关联。或平行于CuO2平面。与超导状态的大各向异性相反,H-pg的场各向异性仅归因于g因子。我们的发现表明伪间隙是单线自旋的,与基于掺杂Mott绝缘子的模型一致。

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