...
首页> 外文期刊>The European physical journal, B. Condensed matter physics >Donor-impurity related binding energy and photoinization cross-section in quantum dots: electric and magnetic fields and hydrostatic pressure effects
【24h】

Donor-impurity related binding energy and photoinization cross-section in quantum dots: electric and magnetic fields and hydrostatic pressure effects

机译:量子点中与供体杂质相关的结合能和光化截面:电场和磁场以及静水压力效应

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We have studied the behavior of the binding energy and photoionization cross-section of a donorimpurity in cylindrical-shape GaAs-Ga0.7Al0.3As quantum dots, under the effects of hydrostatic pressure and in-growth direction applied electric and magnetic fields. We have used the variational method under the effective mass and parabolic band approximations. Parallel and perpendicular polarizations of the incident radiation and several values of the quantum dot geometry have also been considered. Our results show that the photoionization cross-section growths as the hydrostatic pressure is increased. For parallel polarization of the incident radiation, the photoionization cross-section decreases when the impurity is shifted from the center of the dot. In the case of perpendicular polarization of the incident radiation, the photoionization cross-section increases when the impurity is shifted in the radial direction of the dot. For on-axis impurities the transitions between the ground state of the impurity and the ground state of the quantum dot are forbidden. In the low pressure regime (less than 13.5 kbar) the impurity binding energy growths linearly with pressure, and in the high pressure regime (higher than 13.5 kbar) the binding energy growths up to a maximum and then decreases. Additionally, we have found that the applied electric and magnetic fields may favor the increase or decrease in binding energy, depending on the impurity position.
机译:我们研究了在静水压力和沿生长方向施加电场和磁场的作用下,圆柱形GaAs-Ga0.7Al0.3As量子点中供体杂质的结合能和光电离截面的行为。我们在有效质量和抛物线带近似下使用了变分方法。还考虑了入射辐射的平行和垂直极化以及量子点几何形状的几个值。我们的结果表明,随着静水压力的增加,光电离截面不断增大。对于入射辐射的平行偏振,当杂质从点中心偏移时,光电离截面减小。在入射辐射的垂直极化的情况下,当杂质沿点的径向移动时,光电离截面增大。对于同轴杂质,禁止在杂质的基态和量子点的基态之间进行转换。在低压状态(小于13.5 kbar)中,杂质结合能随压力线性增长,而在高压状态(大于13.5 kbar)中,结合能最大增长,然后下降。另外,我们已经发现,取决于杂质位置,施加的电场和磁场可能有利于结合能的增加或减少。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号