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Dispersions of propagating optical phonons and electron-phonon interactions in wurtzite GaN/ZnO quantum wells

机译:纤锌矿型GaN / ZnO量子阱中传播声子的色散和电子-声子相互作用

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摘要

Based on the dielectric-continuum model and Loudon's crystal model, the propagating optical phonons and electron-phonon interactions are studied by using the determinate method. The dispersions and electron-phonon coupling functions of the propagating optical phonons are investigated for wurtzite GaN/ZnO single quantum well (QW). The numerical results show that there are infinite propagating phonon branches by a quantum number m in the two regions. The propagating optical phonons are more dispersive for decreasing m. Moreover, the electron-phonon coupling functions have oscillating behavior in barrier layer (GaN), the periods of electron-phonon coupling functions in low frequency region are larger than those in high frequency region. The electron-phonon coupling functions of propagating phonon modes in low frequency region are more important than those in high frequency region.
机译:基于介电连续体模型和劳登晶体模型,采用确定法研究了传播的光子和电子-声子的相互作用。研究了纤锌矿GaN / ZnO单量子阱(QW)的传播光子的色散和电子-声子耦合函数。数值结果表明,在两个区域中存在数量为m的无限传播声子分支。传播的光子在减小m时具有更大的色散。此外,电子-声子耦合函数在势垒层(GaN)中具有振荡行为,低频区域中的电子-声子耦合函数的周期大于高频区域中的周期。低频区域中传播的声子模式的电子-声子耦合功能比高频区域中的电子-声子耦合功能更为重要。

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