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AC response of Bimodified Pb0.92La0.08(Zr0.65Ti0.35)(0.98)O-3 ceramics

机译:双改性Pb0.92La0.08(Zr0.65Ti0.35)(0.98)O-3陶瓷的交流响应

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Polycrystalline electroceramics have been prepared by varying modifier to former (Bi/La) ratios (z/1 - z) according to the complex formula Pb-0.92[ La(1-z)Biz](0.08)[Zr0.65Ti0.35](0.98)O-3 (PLBZT), where z = 0.0, 0.3, 0.6. The electrical properties of PLBZT compounds were studied using the ac impedance spectroscopy technique over a wide range of temperature ( 30 - 500 degrees C) in the frequency range of 100 Hz-1 MHz. Nyquist plots recorded at different temperatures show a decrease in the bulk resistance (Rb) with rise in temperature for PLZT material (z = 0.0) i.e., NTCR behavior like semiconductors. The Nyquist plots also indicates that the bulk resistance of the material has been observed to be concentration dependent and decreased in two order of magnitude with higher Bi-addition in PLZT matrix. Bismuth (Bi) substitution at the lanthanum (La) position not only resulted in lowering of the electrical resistance with its higher concentration but also has changed the NTCR behavior of PLZT (z = 0.0) to PTCR (positive temperature coefficient of resistance) for PLBZT. Electrical property studied by complex impedance spectroscopic method also indicates the evidence of (i) single electrical relaxation attributed to the presence of bulk contribution to the electrical properties, (ii) presence of temperature dependent electrical relaxation phenomenon and (i) diminution in the barrier to the mobility of charge carrier on Bi-substitution.
机译:通过根据复杂公式Pb-0.92 [La(1-z)Biz](0.08)[Zr0.65Ti0.35]改变改性剂与前者(Bi / La)的比率(z / 1-z)来制备多晶陶瓷。 (0.98)O-3(PLBZT),其中z = 0.0、0.3、0.6。使用交流阻抗谱技术在100 Hz-1 MHz的宽温度范围(30-500摄氏度)中研究了PLBZT化合物的电性能。在不同温度下记录的奈奎斯特图显示PLZT材料(z = 0.0)随温度的升高,体电阻(Rb)减小,即半导体的NTCR行为。奈奎斯特图还表明,在PLZT基质中,随着Bi含量的增加,材料的体电阻与浓度有关,并且降低了两个数量级。镧(La)位置处的铋(Bi)替代不仅导致其浓度降低的电阻降低,而且已经将PLZT的NTCR行为(z = 0.0)更改为PLBZT的PTCR(电阻正温度系数) 。通过复数阻抗谱法研究的电性能还表明了以下证据:(i)单个电弛豫归因于对电性能的整体贡献;(ii)温度相关的电弛豫现象的存在;(i)势垒减小电荷载体在双取代中的迁移性。

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