Gate Dielectric Process Technology for the Sub-1 nm Equivalent Oxide Thickness(EOT)Era

摘要

The semiconductor industry is now in its third generation of gate dielectrics.The first generation was the silicon dioxide(SiO2)era from the early 1960s to about the mid-1990s.The benefits of SiO2 noted in the earlier articles in this issue of Interface included utilization as:(a)passivation of surface dangling bonds and p-n junction interfaces,(b)pattern/diffusion masking ability,and(c)insulator supporting medium for aluminum interconnects between sections of the integrated circuit.