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首页> 外文期刊>The Astrophysical Journal. Supplement Series >Electron-ion recombination rate coefficients and photoionization cross sections for astrophysically abundant elements. XI. N V-VI and F VII-VIII for ultraviolet and X-ray modeling
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Electron-ion recombination rate coefficients and photoionization cross sections for astrophysically abundant elements. XI. N V-VI and F VII-VIII for ultraviolet and X-ray modeling

机译:天体上富含元素的电子离子复合率系数和光电离截面。十一。 N V-VI和F VII-VIII用于紫外线和X射线建模

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摘要

The inverse processes of photoionization and electron-ion recombination for hv + N v <-> N VI + e, hv + N VI <-> N VII + e, hv + F VII <-> F + e, and hv + F VIII <-> F IX + e are studied in detail using a self-consistent unified method for the total electron-ion recombination. The method enables calculation of the total and level-specific recombination rate coefficients alpha(R) and alpha(R)(i), subsuming both radiative and dielectronic recombination (RR and DR). The photoionization and recombination cross sections sigma(PI) and sigma(RC) are computed using an identical wave function expansion for both processes in the close coupling approximation using the R-matrix method. The results include total and partial photoionization cross sections and recombination rate coefficients for all fine-structure levels up to n <= 10, about 100 for Li-like N V and F VII with 1/2 <= J <= 17/2, and over 170 for He-like N VI and F VIII with 0 <= J <= 10. Level-specific sigma(PI)(nSLJ) and alpha(R)(T; nSLJ) are calculated for the first time for these ions. The coupled-channel wave function expansions for N V and F VII consist of 17 levels of cores N VI and F VIII, respectively, and for N vi and F VIII consist of 16 levels of cores N VII and F IX, respectively. Relativistic fine structure is considered through the Breit-Pauli R-matrix method. The single-valued total alpha(R)(T) is presented over an extended temperature range for astrophysical and laboratory plasma applications. Although the total unified alpha R(T) for all ions agree well with the available published RR+DR rates, significant differences are noted at the DR peak for N v. Total sigma(RC)(E) and alpha(R)(E) as functions of photoelectron energy are presented for comparison with experiments. Total rates for H-like N VIIi and F IX are also given for completeness. The cross sections sigma(PI) and alpha(RC) include important atomic effects such as radiation damping, channel couplings, and interference of DR and RR, and should be accurate to within 10% - 15%. The comprehensive data sets are applicable for ionization balance and recombination-cascade models for UV and X-ray lines.
机译:hv + N v <-> N VI + e,hv + N VI <-> N VII + e,hv + F VII <-> F + e和hv + F的光电离和电子离子重组的逆过程使用自洽统一方法对VIII-F IX + e进行详细的总电子离子重组。该方法能够计算总的和特定于水平的复合率系数α(R)和α(R)(i),同时考虑辐射和双电子复合(RR和DR)。光电离和重组截面sigma(PI)和sigma(RC)是使用R-矩阵方法在紧密耦合近似中对两个过程使用相同的波函数展开来计算的。结果包括所有精细结构水平的总和部分光电离截面和重组率系数,n≤10,Li类NV和F VII的锂离子约为1/2,J≤17/2约为100。对于像He那样的N VI和F VIII,其0 <= J <= 10,超过170。对于这些离子,首次计算了特定于水平的sigma(PI)(nSLJ)和alpha(R)(T; nSLJ)。 N V和F VII的耦合通道波函数展开分别由17个层级的核心N VI和F VIII组成,而N vi和F VIII的耦合通道波函数展开分别由16个层级的核心N VII和F IX组成。相对论的精细结构是通过Breit-Pauli R-矩阵方法考虑的。单值总α(R)(T)在天文学和实验室血浆应用的扩展温度范围内显示。尽管所有离子的总统一alpha R(T)与可用的已发布RR + DR率非常吻合,但在N v。总sigma(RC)(E)和alpha(R)(E提出了作为光电子能量的函数,以与实验进行比较。为了完整起见,还给出了类似H的N VIIi和F IX的总费率。横截面sigma(PI)和alpha(RC)包括重要的原子效应,例如辐射衰减,通道耦合以及DR和RR的干扰,其精度应在10%-15%之内。全面的数据集适用于UV和X射线线的电离平衡和重组级联模型。

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