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Townsend coefficient, escape curve, and efficiency of run away-electron beam formation in argon

机译:汤森系数,逸出曲线和氩气中逃逸电子束的形成效率

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The ionization and drift characteristics of electrons in argon are simulated by the method multi-particle dynamics. It is shown that. in argon (as well as in other gases studied earlier), the Townsend regime of ionization sets in even in strong fields if the electrode distance is much larger than the reciprocal Townsend coefficient. The dependences of the basic ionization and drift characteristics on the reduced field intensity are obtained, and an escape curve is constructed separating the region of effective electron multiplication from the region where the electrons leave the discharge gap having no time to multiply. The formation efficiency of a runaway-electron beam is calculated. It is shown that the dependence of the electrode voltage generating a given fraction of runaway electrons on the product of the pressure by the electrode distance has a form that qualitatively agrees with the runaway curve. When the efficiency is not too high (<= 20%), the runaway curves virtually coincide with isoefficiency curves.
机译:用多粒子动力学方法模拟了氩气中电子的电离和漂移特性。如图所示。在氩气中(以及之前研究的其他气体中),如果电极距离远大于倒数汤森德系数,则即使在强电场中,汤森德电离条件也会发生。获得了基本电离和漂移特性对减小的场强的依赖性,并且构造了逃逸曲线,其将有效电子倍增区域与电子离开放电间隙而没有时间倍增的区域分开。计算失控电子束的形成效率。可以看出,产生给定分数的失控电子的电极电压对压力乘以电极距离的乘积的依赖性在形式上与失控曲线吻合。当效率不太高(<= 20%)时,失控曲线实际上与等效率曲线重合。

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