Problems in Measurements of Parameters of Elements and Structures in Modern Micro- and Nanoelectronics Considering TiN/Ti Diffusion Barrier Structures As an Example

摘要

Results of a comprehensive analysis of process variables of TiN/Ti diffuse barrier structures used in modern microelectronics are presented. To provide reliable spectral ellipsometry results, which is a common technique for postprocess control of these structures during the testing stage of the manufacturing process, a comprehensive approach is suggested that consists in consistent processing of transmission electron microscopy and X-ray reflectometry data. The resulting data were used to calculate the variances of optical coefficients of spectral ellipsometry, which depend on features of the manufacturing process and are required for analysis of the parameters of manufactured diffuse barrier structures.