首页> 外文期刊>Chemistry, an Asian journal >A Pentacyclic Nitrogen-Bridged Thienyl-Phenylene-Thienyl Arene for Donor-Acceptor Copolymers: Synthesis, Characterization, and Applications in Field-Effect Transistors and Polymer Solar Cells
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A Pentacyclic Nitrogen-Bridged Thienyl-Phenylene-Thienyl Arene for Donor-Acceptor Copolymers: Synthesis, Characterization, and Applications in Field-Effect Transistors and Polymer Solar Cells

机译:供体-受体共聚物的五环氮桥连的噻吩基-苯撑-噻吩基芳烃:合成,表征及在场效应晶体管和聚合物太阳能电池中的应用

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摘要

A pentacyclic benzodipyrrolothiophene (BDPT) unit, in which two outer thiophene rings are covalently fastened with the central phenylene ring by nitrogen bridges, was synthesized. The two pyrrole units embedded in BDPT were constructed by using one-pot palladium-catalyzed amination. The coplanar stannylated Sn-BDPT building block was copolymerized with electron-deficient thieno[3,4-c]pyrrole-4,6-dione (TPD), benzothiadiazole (BT), and dithienyl-diketopyrrolopyrrole (DPP) acceptors by Stille polymerization. The bridging nitrogen atoms make the BDPT motif highly electron-abundant and structurally coplanar, which allows for tailoring the optical and electronic properties of the resultant polymers. Strong photoinduced charge-transfer with significant band-broadening in the solid state and relatively higher oxidation potential are characteristic of the BDPT-based polymers. Poly(benzodipyrrolothiophene-alt-benzothiadiazole) (PBDPTBT) achieved the highest field-effect hole mobility of up to 0.02 cm~2 V~(-1)s~(-1). The photovoltaic device using the PBDPTBT/PC_(71)BM blend (1:3, w/w) exhibited a V_(oc) of 0.6 V, a J_(sc) of 10.34 mA cm~(-2), and a FF of 50%, leading to a decent PCE of 3.08%. Encouragingly, the device incorporating poly(benzodipyrrolothiophene-alt-thienopyrrolodione) (PBDPTTPD)/PC_(71)BM (1:3, w/w) composite delivered a highest PCE of 3.72%. The enhanced performance arises from the lower-lying HOMO value of PBDPTTPD to yield a higher V_(oc) of 0.72 V.
机译:合成了五环苯并二吡咯并噻吩(BDPT)单元,其中两个外噻吩环通过氮桥与中心亚苯基环共价固定。嵌入在BDPT中的两个吡咯单元是通过使用一锅钯催化的胺化反应构建的。通过Stille聚合将共面锡烷基化的Sn-BDPT结构单元与缺电子的噻吩并[3,4-c]吡咯-4,6-二酮(TPD),苯并噻二唑(BT)和二噻吩基-二酮吡咯并吡咯(DPP)受体共聚。桥接的氮原子使BDPT基序具有高度的电子丰度和结构共面性,从而可以调整所得聚合物的光学和电子性质。 BDPT基聚合物的特征是在固态中具有明显的能带展宽和较强的氧化势的强光诱导电荷转移。聚苯并二吡咯并噻吩-alt-苯并噻二唑(PBDPTBT)具有最高的场效应空穴迁移率,最高可达0.02 cm〜2 V〜(-1)s〜(-1)。使用PBDPTBT / PC_(71)BM共混物(1:3,w / w)的光伏器件的V_(oc)为0.6 V,J_(sc)为10.34 mA cm〜(-2),并且FF 50%的收入,则PCE达到3.08%。令人鼓舞的是,包含聚(苯并二吡咯并噻吩-alt-噻吩并二酮)(PBDPTTPD)/ PC_(71)BM(1:3,w / w)复合材料的设备可实现3.72%的最高PCE。性能增强是由于PBDPTTPD的较低HOMO值产生的较高V_(oc)为0.72 V.

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