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Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers

机译:用于15 MHz超声换能器的声匹配层堆叠的微制造

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摘要

This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon-polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (110)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5 mm long trenches that were subsequently filled with Spurr's epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon-polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, -6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband.
机译:本文提出了一种新颖的方法,该方法使用了来自MEMS工业的制造技术来制造15 MHz压电超声换能器的多个匹配层的堆栈。使用微机械加工技术(即,光刻和蚀刻)在硅晶片衬底上制造声匹配层,以设计具有所需声特性的硅和聚合物层。测试了两个匹配层配置:由硅聚合物复合材料和聚合物组成的双层结构,以及由硅,复合材料和聚合物组成的三层结构。该复合材料是2-2连通性的硅和聚合物的双相材料。通过对(110)取向的绝缘体上硅晶片进行各向异性湿法蚀刻来制造匹配层。用40 wt%的KOH蚀刻晶圆,以形成83μm深和4.5 mm长的沟槽,随后将沟槽填充以具有2.4 MRayl声阻抗的Spurr环氧树脂。这导致了三层的堆叠:硅衬底,硅聚合物复合中间层和顶部的聚合物层。将叠层粘合到PZT盘上以形成声换能器,并在脉冲回波设置中测试所制造换能器的声学性能,在其中测量中心频率,-6 dB相对带宽和插入损耗。测量具有两个匹配层的换能器的相对带宽为70%,双向插入损耗为18.4 dB,脉冲长度为196 ns。具有三个匹配层的换能器的分数带宽为90%至93%,双向插入损耗的范围为18.3至25.4 dB,脉冲长度为326和446 ns。具有三个匹配层的换能器的长脉冲长度归因于通带中的纹波。

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