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首页> 外文期刊>Ultrasonics sonochemistry >Influence of passive potential on the electronic property of the passive film formed on Ti in 0.1 M HCl solution during ultrasonic cavitation
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Influence of passive potential on the electronic property of the passive film formed on Ti in 0.1 M HCl solution during ultrasonic cavitation

机译:超声空化过程中被动电位对0.1 M HCl溶液中Ti上形成的被动膜的电子性能的影响

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The influence of the applied passive potential on the electronic property of the passive film formed on Ti at different potentials in 0.1 M HCl solution during ultrasonic cavitation, was investigated by electrochemical impedance spectra (EIS) and Mott-Schottky plot. The influence of the applied passive potential on the structure and composition of the passive film was studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the applied passive potential can obviously affect the electronic property of the passive film formed on Ti during ultrasonic cavitation. The resistance of the passive film increased, and the donor density of the passive film decreased with increasing the potential. The flat band potential moved to positive direction and the band gap of the passive film moved to negative direction with increasing potential. AES and XPS results indicated that the thickness of the passive film increased evidently with applying passive potential. The passive film was mainly composed of the mixture of TiO and TiO2. While the TiO2 content increased with increasing the applied passive potential, and the crystallization of the passive film increased with the increased potential. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过电化学阻抗谱(EIS)和Mott-Schottky图研究了在超声空化过程中施加的无源电势对在0.1 M HCl溶液中不同电势下在Ti上形成的无源膜形成的电子膜的电子性能的影响。通过X射线光电子能谱(XPS)和俄歇电子能谱(AES)研究了施加的无源电势对无源膜的结构和组成的影响。结果表明,在超声空化过程中,施加的无源电势可以明显影响在Ti上形成的无源膜的电子性能。随着电势的增加,无源膜的电阻增加,并且无源膜的施主密度降低。随着电势的增加,平带电势向正方向移动,而无源膜的带隙向负方向移动。 AES和XPS结果表明,无源膜的厚度随着施加无源电势而明显增加。钝化膜主要由TiO和TiO2的混合物组成。 TiO2含量随所施加的被动电位的增加而增加,而被动膜的结晶随电位的增加而增加。 (C)2015 Elsevier B.V.保留所有权利。

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