Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses

摘要

Irradiation of a porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 10~(16) W cm~(-2) intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 2.5 keV. The increase was 30-fold for E > 8 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated.