Numerical Simulation of Tunnel Diodes for Multi-junction Solar Cells

摘要

This work presents efforts to simulate numerically the current voltage (IV) curve of a III-V based Esaki tunnel diode. Using a tunneling model, which takes into account the full nonlocality of the barrier, a good agreement between measured and simulated IV curves of a GaAs tunnel diode was achieved. The influence of a series resistance effect as well as the importance of trap assisted tunneling (TAT) could be shown. In addition, we present a two-dimensional model of a III-V multi-junction solar cell including the numerical model of the investigated Esaki tunnel diode.