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Thin-film Silicon Solar Cell Technology

机译:薄膜硅太阳能电池技术

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This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (mu c-Si:H) thin films (layers), both deposited at low temperatures (200 deg C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J_(sc), FF, V_(oc)) with the 'theoretical' limiting values. Tandem and multijunction cells are introduced; the mu c-Si: H/a-Si: H or 'micromorph' tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies.
机译:本文介绍了在针型和压合型太阳能电池中使用氢化非晶硅(a-Si:H)和氢化微晶硅(mu c-Si:H)薄膜(层)的方法,两者均在低温下沉积(200摄氏度)通过等离子体辅助化学气相沉积(PECVD)从硅烷和氢气的混合物中提取。描述了i层的光学和电学性质。这些特性与微结构有关,因此与i层沉积速率有关,这反过来又影响了生产量。解释了接触层和反射层在实现低电损耗和光损耗方面的重要性,特别是对于覆板情况。特别是,透明导电氧化物(TCO)所需的特性需要很好地平衡,以便同时提供高电导率(最好具有高电子迁移率),低光吸收和表面纹理(以降低光损耗)和明显的光陷阱)。到目前为止制造的单结非晶和微晶p-i-n型太阳能电池的关键参数(J_(sc),FF,V_(oc))与“理论”极限值进行了比较。引入了串联和多结电池;详细解释了μc-Si:H / a-Si:H或“微晶型”串联太阳能电池概念,并列出并评论了此处获得的最新结果。决定薄膜硅模块大规模生产的因素,既取决于固有的技术原因(详细描述),又取决于经济因素。这些因素的累积效应导致效率显着降低,从记录的实验室单元的值到生产模块的统计平均值。最后,展示了薄膜硅光伏组件的应用,尤其是在建筑集成光伏(BIPV)中。在这种情况下,薄膜硅模块的能量产出成为衡量模块性能的重要指标,并且与其他光伏技术相比非常有利。

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