Short communication: 100 cm~2 solar cells on czochralski silicon with an efficiency of 20.2 percent

摘要

A solar cell process optimized for oxygen-contaminated silicon was used to fabricate 10 x 10 cm~2 cells ongallium-doped p-type Czochralski (Cz) silicon. An independentlyconfirmed record efficiency of 20.2 percent was achieved.Although the material used contains a significant concentration ofinterstitial oxygen, no illumination-induced degradation of the cellparameters was observed. This is in excellent agreement with theobservation that the metastable defect underlying the minoritycarrier lifetime is correlated with oxygen and boron. Thus, usinggallium instead of boron as the dopant for p-type Cz silicon is anappropriate way to avoid the carrier lifetime degradation which isobserved in boron-doped oxygen-contaminated Cz-Si.