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首页> 外文期刊>Plasma Sources Science & Technology >Electron energy distributions and plasma parameters in high-power pulsed magnetron sputtering discharges
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Electron energy distributions and plasma parameters in high-power pulsed magnetron sputtering discharges

机译:大功率脉冲磁控溅射放电中的电子能量分布和等离子体参数

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摘要

We report on the results obtained using time-resolved Langmuir probe measurements in high-power pulsed dc magnetron sputtering discharges. Time evolutions of the electron energy distribution and the local plasma parameters were investigated at a substrate position of 100 mm from a planar target of 100 mm diameter during a high-rate deposition of copper films. The average target power density in a pulse was 500 W cm~(-2) at a repetition frequency of 1 kHz, a voltage pulse duration of 200 _s and an argon pressure of 1 Pa. The electron energy distributions with two energy groups and sharply truncated high-energy tails were observed during a pulse. After a fast rise in a 50 _s initial stage of the pulse, the kinetic temperature of electrons, defined using the mean electron energy, remained in the range from 10500 to 12 200 K till the pulse termination. The temperature of weakly populated hot electrons decreased rapidly in the initial stage of the pulse approaching the kinetic temperature approximately 100 _s after a pulse initiation. High plasma densities, being in the range 1 × 10~(12)-2 × 10~(12) cm~(-3) for 100_s, were achieved at the substrate position with a 50 _s delay after establishing the 125_s steady-state discharge regime with the target power density of 650-680 W cm~(-2)during a pulse. The plasma potential slowly increased from 0.5 to 3.5 V during the pulse and 25 μs after its termination.
机译:我们报告在大功率脉冲直流磁控管溅射放电中使用时间分辨的Langmuir探针测量获得的结果。在铜膜的高速沉积过程中,在距100 mm直径的平面靶100 mm的衬底位置上,研究了电子能量分布和局部等离子体参数的时间演变。在1 kHz的重复频率,200 s的电压脉冲持续时间和1 Pa的氩气压力下,脉冲中的平均目标功率密度为500 W cm〜(-2)。电子能以两个能级急剧分布在脉冲过程中观察到截短的高能尾巴。在脉冲的50 s初始阶段快速上升之后,使用平均电子能量定义的电子运动温度一直保持在10500至12200 K的范围内,直到脉冲终止。在脉冲的初始阶段,人口稀少的热电子的温度迅速下降,接近动力学温度,大约达到100 s s。在建立125_s稳态后,在衬底位置获得了100_s的高等离子体密度,范围为1×10〜(12)-2×10〜(12)cm〜(-3)达100_s。放电过程中的目标功率密度为650-680 W cm〜(-2)的放电方式。在脉冲期间以及终止后的25μs中,等离子体电势从0.5 V缓慢增加。

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