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Synthesis, properties, and electrical memory characteristics of new diblock copolymers of polystyrene-block-poly(styrene-pyrene)

机译:新型聚苯乙烯-嵌段-聚(苯乙烯-py)二嵌段共聚物的合成,性能和电存储特性

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In this study, we report the synthesis, properties, and electrical memory characteristics of new diblock copolymers, polystyrene-block-poly(styrene-pyrene) (PS-b-P(St-Py)), prepared by combining atom transfer radical polymerization and Suzuki coupling reaction. The effects of the St-Py block chain length on the electronic energy level, photophysical properties, and memory characteristics were explored. The PS_(42)-b-P(St-Py)108 and PS_(66)-b-P(St-Py)_(67) devices exhibited a dynamic random access memory characteristics with different turn-on threshold voltages of —2.7 and —3.1 V, respectively. Moreover, these memory devices showed a high ON/OFF current ratio of 10~9 and were electrically stable for at least 10~4 s in both ON and OFF states. However, the PS_(113)-b-P(St-Py)_(45)-based device displayed an insulating state in a low current variation of 10~(-12) to 10~(-14) A, which had a short St-Py block length. The mechanism of the switching behavior was explained by the charge hopping conduction between the pyrene units with coexisting charge-trapping environment. The volatility of the memory effect was depended on the ability of charge trapping/back transferring of trapped charge. The present study suggested that the electrical memory characteristics could be efficiently tuned through the block ratio between insulating segment and pendant-conjugated segment of the diblock polymers.
机译:在这项研究中,我们报告了通过结合原子转移自由基聚合和Suzuki制备的新型双嵌段共聚物聚苯乙烯-嵌段-聚(苯乙烯-py)(PS-bP(St-Py))的合成,性质和电存储特性偶联反应。探索了St-Py嵌段链长度对电子能级,光物理性质和记忆特性的影响。 PS_(42)-bP(St-Py)108和PS_(66)-bP(St-Py)_(67)器件表现出动态随机存取存储特性,具有不同的开启阈值电压-2.7和-3.1 V,分别。而且,这些存储器件表现出高的10/9的开/关电流比,并且在开和关状态下都至少稳定10〜4 s。但是,基于PS_(113)-bP(St-Py)_(45)的设备在10〜(-12)至10〜(-14)A的低电流变化下显示出绝缘状态,该电流短St-Py块长度。 with行为与共存的俘获环境之间的电荷跳跃传导解释了开关行为的机制。记忆效应的挥发性取决于电荷俘获/被俘获电荷的反向转移的能力。本研究表明,可以通过二嵌段聚合物的绝缘链段和侧链共轭链段之间的嵌段比率来有效地调节电存储特性。

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