首页> 外文期刊>Chemical Engineering Science >Intensification of G/L absorption in microstructured falling film. Application to the treatment of chlorinated VOC's - part I: Comparison between structured and microstructured packings in absorption devices
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Intensification of G/L absorption in microstructured falling film. Application to the treatment of chlorinated VOC's - part I: Comparison between structured and microstructured packings in absorption devices

机译:微结构降膜中G / L吸收的增强。在处理氯化挥发性有机化合物中的应用-第一部分:吸收装置中结构填料和微结构填料的比较

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The absorption of tetrachloroethylene - the VOC - in di-ethyl-hexyl-adipate - the solvent - was carried out as an example of gaseous waste treatment. Two gas-liquid contactors were used: a column provided with as structured Sulzer EX~? packing and a microstructured falling-film absorber provided with thin vertical channels, manufactured by the Institut für Mikrotechnik Mainz (IMM). The overall transfer coefficient of VOC, K_Ga, was calculated from the absorption efficiency of the various runs carried out, allowing comparison of the two gas-liquid contactors. Due to the high solubility of the considered VOC, mass transfer was shown to be mainly controlled by gas-side transfer rates. Transfer coefficient K_Ga of the two absorbers were found to be comparable, but with gas and liquid velocity in the microstructured absorber from one to two orders of magnitude below those in the column, expressing the high transfer performance offered by the microsystem. Moreover, the thickness of the liquid film in the channels was below 100γm, much lower than that in a structured packing near 500γm. This shows that lower liquid flow rates can be used for efficient absorption in the microsystem. It is shown that contrary to conventional structured packing, the designed contact specific area in the microabsorber strictly corresponds to the interfacial G/L surface. This enables more compact and to miniaturize G/L contactors to be designed.
机译:作为气态废物处理的一个例子,进行了四氯乙烯(VOC)在己二酸二乙基己酯(溶剂)中的吸收。使用了两个气液接触器:一个装有结构化的Sulzer EX™的塔。由美因茨技术研究所(IMM)制造的带有薄的垂直通道的填料和微结构化降膜吸收器。从各种运行的吸收效率计算出VOC的总传递系数K_Ga,从而可以比较两个气液接触器。由于所考虑的VOC的高溶解度,因此表明传质主要受气体侧传质速率控制。发现两个吸收器的传递系数K_Ga是可比较的,但是在微结构吸收器中的气体和液体速度比塔中的气体和液体速度低一个到两个数量级,这表明了微系统提供的高传递性能。而且,通道中液膜的厚度低于100γm,远低于500γm附近的规整填料的厚度。这表明较低的液体流速可用于微系统中的有效吸收。结果表明,与传统的规整填料相反,微吸收剂中设计的接触比面积严格对应于界面的G / L表面。这样可以使结构更紧凑,并可以最小化设计的G / L接触器。

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