Nanosecond semiconductor diodes for pulsed power switching

摘要

The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 10(10) W) and repetition rate (to 10(4) Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 10(2) A cm(-2) and 10(8) W in the former case, and 10(5) A cm(-2) and 10(10) W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.