Effect of Ion Irradiation on the Structure and Luminescence Characteristics of Porous Silicon Impregnated with Tungsten- Telluride Glass Doped by Er and Yb Impurities

摘要

Using transmission electron microscopy and elemental analysis, it has been shown that tungsten telluride glass (TTG) containing erbium and ytterbium as impurities penetrates into pores of porous silicon (PS) when melted in vacuum at 500°C. It has been found that the intensity of photoluminescence (PL) of erbium at the wavelength of 1.54 μm in PS: TTG layers increases by a factor of up to 5 in the layers irradiated by P~+ and Ar~+ ions. This is assigned to ion mixing which favors interaction among the Er ions and PS-embed- ded Si nanocrystals initiating sensitization of the PL, as well as to broadening of the glass-impregnated PS region. Implantation of the lighter Ne~+ ions affects only weakly the PL of erbium ions.