The change in the work function of the Si(111) surface caused by deposition of a submonolayer film of barium has been calculated with due account of dipole–dipole adatom repulsion and metallization effects. The results of the calculations agree satisfactorily with experimental data. The character of the variation in the model parameters in the Ba–Sm–Eu–Yb series is discussed. The electron tunneling probability from an adatom quasi-level to the substrate conduction band and the energy barrier for interatomic transitions of electrons in an adlayer were estimated.
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