...
首页> 外文期刊>Physics of plasmas >Low-q resonances, transport barriers, and secondary electrostatic convective cells
【24h】

Low-q resonances, transport barriers, and secondary electrostatic convective cells

机译:低q共振,传输势垒和二次静电对流池

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Recent experimental observations have suggested key characteristics of internal transport barrier (ITB) formation near low-q surfaces in off-axis minimum-q (OAMq) discharges. These observations identify mean profile flattening localized to the low-q surface as a transition precursor in the absence of observable magnetic field perturbations. This observation suggests an electrostatic model of ITB formation which accounts for strong transport in the immediate vicinity of the low-q surface, as well as the formation of an ITB nearby the surface. Here, a low-m electrostatic convective cell driven by modulational instability of the background drift wave turbulence is discussed in the context of ITB formation near low-q resonances in OAMq discharges. Unlike pure m=n=0 zonal flows, convective cells are capable of intense mixing localized around low-q resonant surfaces, thus relaxing del T and del n profiles at the k center dot B=0 resonance. However, nearby, but off the low-q resonant surface the magnitude of convective cell shear is maximal, providing an effective means of triggering a transport barrier there. Field line bending coupled with collisional viscosity are found to strongly damp the intensity of the vortical flows except in the case of weak magnetic shear. Furthermore, collisionless nonlinear saturation mechanisms such as nonlinear wave trapping are largely circumvented due to the strong mixing of the convective cell. This suggests that low-m convective cells may play a key role in the regulation of turbulent transport near low-q resonances for OAMq discharges.(C) 2007 American Institute of Physics.
机译:最近的实验观察表明,离轴最小q(OAMq)放电中低q表面附近的内部传输垒(ITB)形成的关键特征。这些观察结果表明,在没有可观察到的磁场扰动的情况下,定位在低q表面的平均轮廓平坦化是过渡前兆。该观察结果表明,ITB形成的静电模型解释了在低q表面附近以及在该表面附近ITB形成的强迁移。在此,在OAMq放电中低q共振附近ITB形成的背景下,讨论了由背景漂移波湍流的调制不稳定性驱动的低m静电对流电池。与纯m = n = 0的纬向流不同,对流单元能够在低q共振表面附近进行强烈混合,从而放松了k个中心点B = 0共振处的del T和del n分布。然而,在低q共振表面附近但在低q共振表面附近,对流单元剪切的幅度最大,这提供了触发那里的传输屏障的有效手段。除弱磁剪切的情况外,发现磁力线弯曲加上碰撞粘度会极大地减弱涡流的强度。此外,由于对流单元的强烈混合,很大程度上避免了诸如非线性波捕获之类的无碰撞非线性饱和机制。这表明低m对流细胞可能在OAMq放电的低q共振附近的湍流输运的调节中起关键作用。(C)2007美国物理研究所。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号