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RENORMALIZATION OF THE ELECTRON-PHONON INTERACTION BY STRONG ELECTRONIC CORRELATIONS IN HIGH-T-C SUPERCONDUCTORS

机译:高T-C超导体中强电子相关性的电子声子相互作用的重新归一化

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The renormalization of the electron-phonon interaction by strong electronic correlations is studied using a one-band Hubbard model with infinite repulsion and nearest (t model) and nearest and second-nearest (tt' model) neighbor hopping terms and an on-site electron-phonon coupling. Using Hubbard's X operators and an extension from 2 to N degrees of freedom for the electrons the leading contributions for the electron self-energy and the vertex function in 1/N and the electron-phonon coupling constant are given and numerically evaluated for a square lattice. We find that the momentum dependence of the vertex function depends strongly on doping: For large dopings it is rather weak, with decreasing doping it becomes more and more pronounced leading to a strong reduction of the vertex at larger momentum transfers until, for very small dopings, the vertex essentially consists of a forward scattering peak with a width proportional to the doping. This behavior occurs both in the t and the tt' models and also in one dimension where analytic expressions are derived. Correlation effects also change alpha(2)F in general: The full-symmetric component alpha(2)F(1) is in the t model somewhat, in the tt' model rather strongly suppressed, especially near half-filling; the other symmetry components alpha(2)F(i) with i=2,...,5 increase strongly with decreasing doping and are of similar magnitude as alpha(2)F(1) near half-filling. Including also direct Coulomb repulsion nontrivial symmetries such as d wave become more stable than the s-wave order parameter below a critical value for the doping even for the considered phonon-mediated superconductivity. Most dramatic, however, is the quenching of the resistivity due to electron-phonon scattering both in the t and the tt' models at intermediate and small dopings. This result may explain the absence of phonon features in the experimental transport coefficients of high-T-c compounds. [References: 34]
机译:使用带无限推斥力和最近(t模型)以及最近和第二近邻(tt'模型)邻居跳跃项和现场电子的单波段哈伯德模型,研究了强电子相关性对电子-声子相互作用的重新归一化-声子耦合。使用Hubbard的X算子和从2到N的自由度扩展,给出了电子自能和1 / N的顶点函数以及电子-声子耦合常数的主要贡献,并对一个正方形晶格进行了数值评估。我们发现顶点函数的动量依赖性主要取决于掺杂:对于大掺杂,它相当弱,随着掺杂的减少,它变得越来越明显,从而导致在较大动量传递时顶点强烈减小,直到非常小的掺杂。 ,该顶点基本上由一个正向散射峰组成,该峰的宽度与掺杂成正比。在t和tt'模型中以及在导出分析表达式的一维中均会发生这种行为。通常,相关效应也会改变alpha(2)F:在t模型中,全对称分量alpha(2)F(1)在某种程度上受到了抑制,在tt'模型中受到了相当大的抑制,尤其是在半填充附近;其他i = 2,...,5的对称分量alpha(2)F(i)随掺杂减少而大大增加,并且与半填充时的alpha(2)F(1)具有相似的幅度。即使对于考虑的声子介导的超导性,也包括直接的库仑排斥非平凡对称性,例如d波,在掺杂的临界值以下都比s波阶参数更稳定。然而,最引人注目的是在中等和少量掺杂下,t和tt'模型中由于电子声子散射引起的电阻率的猝灭。该结果可以解释高T-c化合物的实验输运系数中没有声子特征。 [参考:34]

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