STRUCTURE AND PROPERTIES OF CLEAN AND IN-COVERED GE(103) SURFACES

摘要

Clean and In-covered Ge(103) surfaces have been studied using scanning tunneling microscopy, electron diffraction, and photoemission. At room temperature the clean surface displays a well ordered (4x1) reconstruction, which on heating to similar to 430 degrees C undergoes a reversible (4x1)<->(1x1) phase transition. Atomically resolved scanning tunneling microscopy images indicate that the (4x1) reconstruction involves two atomic layers. After depositing 2 ML of indium and annealing at 150 degrees C the (4x1) reconstruction is removed and a (1x1) structure forms which can be described as an In terminated ideal (103) surface with In atoms saturating all of the Ge surface dangling bonds. [References: 12]