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ANGULAR DEPENDENCE OF GIANT MAGNETORESISTANCE IN MAGNETIC MULTILAYERS

机译:磁性多层中巨型磁阻的角度依赖性

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Dependence of the current-in-plane giant magnetoresistance (GMR) in magnetic multilayers on the angle phi between the magnetizations of successive magnetic films is analyzed theoretically in the quasiclassical and quantum limits. Spin dependent electron scattering on impurities as well as on interfacial roughness is taken into account. In the quasiclassical limit GMR is shown to vary approximately linearly with sin(2)(phi/2). In the quantum limit the linear behavior occurs only for symmetrical structures with a crystal electronic potential independent of the electron spin orientation. Deviations from the linear behavior occur when either the crystal potential is spin dependent or the structure is asymmetrical. [References: 27]
机译:理论上在准经典和量子极限下分析了磁性多层中的平面电流巨磁阻(GMR)对连续磁性膜磁化之间的角度phi的依赖性。考虑了自旋相关的电子在杂质以及界面粗糙度上的散射。在准经典极限中,GMR显示为随sin(2)(phi / 2)近似线性变化。在量子极限中,线性行为仅发生于晶体电子势独立于电子自旋取向的对称结构。当晶体电势与自旋有关或结构不对称时,就会发生与线性行为的偏差。 [参考:27]

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