Minority carrier blocking to enhance the thermoelectric figure of merit in narrow-band-gap semiconductors

摘要

We present detailed theoretical predictions on the enhancement of the thermoelectric figure of merit by minority carrier blocking with heterostructure barriers in bulk narrow-band-gap semiconductors. Bipolar carrier transport, which is often significant in a narrow-band-gap material, is detrimental to the thermoelectric energy conversion efficiency as it suppresses the Seebeck coefficient and increases the thermal conductivity. When the minority carriers are selectively prevented from participating in conduction while the transport of majority carriers is relatively unaffected by one-sided heterobarriers, the thermoelectric figure of merit can be drastically enhanced. Thermoelectric transport properties such as Seebeck coefficient, electrical conductivity, and electronic thermal conductivity including the bipolar term are calculated with and without the barriers based on the near-equilibrium Boltzmann transport equations under the relaxation time approximation to investigate the effects of minority carrier barriers on the thermoelectric figure of merit. For this, we provide details of carrier transport modeling and fitting results of experimental data for three important material systems, Bi2Te3-based alloys, Mg2Si1-xSnx, and Si1-xGex, that represent, respectively, near-room-temperature (300 K-500 K), midtemperature (600 K-900 K), and high-temperature (> 1000 K) applications. Theoretical maximum enhancement of thermoelectric figure of merit that can be achieved by minority carrier blocking is quantified and discussed for each of these semiconductors.