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首页> 外文期刊>Physical review, B >Enhancement of giant magnetoresistance and oscillation by wave-vector filtering in Fe/Ag/Fe/InAs/Ag
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Enhancement of giant magnetoresistance and oscillation by wave-vector filtering in Fe/Ag/Fe/InAs/Ag

机译:Fe / Ag / Fe / InAs / Ag中波矢量滤波增强巨磁阻和振荡

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摘要

The performance of a giant magnetoresistance (GMR) heterostructure Fe/Ag/Fe/InAs/Ag(100) in the currentperpendicular- to-plane geometry is presented. Calculations are based on a realistic tight-banding model with full spd bands and the recursive Green's function algorithm. Results show that the system's GMR can reach values above 1000%. This GMR enhancement mainly is a result of the wave-vector filtering effect imposed by the InAs layer, restricting conductance within a small region around the Gamma point in the 2D Brillouin zone. Calculations also reveal that when the Fermi level sits in the InAs band gap, MR gradually saturates as a function of InAs thickness with a smooth plateau; whereas when the Fermi level is in the InAs conduction band and close to the band bottom, GMR exhibits an oscillatory behavior with a large period. GMR oscillations are also observed with respect to Ag thickness, with oscillation amplitude determined by the Fermi level position relative to the InAs conduction band edge. The oscillation periods in both cases can be well explained by the concept of quantum-well states, and are determined by the spanning vector of the Fermi surface belly of the material whose thickness is varied. The observed GMR oscillations are due to the quantum interference of conduction electrons near the Gamma point. The GMR and area-resistance (RA) product profiles at a wide range of Fermi energy positions relative to InAs bands are also compared. Near the GMR peak (with GMR above 1000%) in the conduction band, RA product can be as low as 8.8 Omega mu m(2). This feature of large GMR but small RA product results from the wave-vector filtering effect of doped InAs, and it makes the structure under study distinct from conventional GMR systems (small GMR, small RA) or magnetic tunnel junctions (large GMR, large RA).
机译:提出了在当前垂直于平面的几何形状中的巨磁阻(GMR)异质结构Fe / Ag / Fe / InAs / Ag(100)的性能。计算基于具有完整spd波段的逼真的紧缩模型和递归Green函数算法。结果表明,系统的GMR可以达到1000%以上的值。这种GMR增强主要是InAs层施加的波矢量滤波效果的结果,从而将电导率限制在2D布里渊区中Gamma点周围的小区域内。计算还表明,当费米能级位于InAs带隙中时,MR随InAs厚度的函数逐渐饱和,并具有平稳的平台。反之,当费米能级在InAs导带中且接近带底部时,GMR会表现出较大的振荡行为。还观察到了相对于银厚度的GMR振荡,其振荡幅度由相对于InAs导带边缘的费米能级位置决定。两种情况下的振荡周期都可以用量子阱态的概念很好地解释,并由厚度变化的材料的费米表面腹的跨度矢量确定。观察到的GMR振荡是由于导电电子在Gamma点附近的量子干扰引起的。还比较了相对于InAs波段,在很宽的费米能量位置上的GMR和面积电阻(RA)产品曲线。在导带中的GMR峰值附近(GMR高于1000%),RA积可低至8.8 Omegaμm(2)。 GMR大但RA乘积小的特征来自掺杂InAs的波矢量滤波效应,这使得所研究的结构不同于常规GMR系统(小GMR,小RA)或磁隧道结(大GMR,大RA )。

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