机译:Band gap engineered ternary semiconductor Pb sub ix/i /sub i x/ix Cd sub 1 i−x/i /sub 1 i −x/i−x S: Nanoparticle‐sensitized solar cells with an efficiency of 8.5 under 1 sun—A combined theoretical and experimental study
机译:Transparent silicon carbide/tunnel SiO sub 2/sub2 passivation for c‐Si solar cell front side: Enabling i J/iJ sub sc/subsc 42 mA/cm sup 2/sup2 and i i V/iV sub oc/suboc of 742 mV