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Optical/Laser Microlithography V

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1.Gradient phase-shifter transitions fabricated by ion milling

机译：通过离子铣削制造的梯度移相器过渡
- 作者：Anton K. Pfau;Univ. of California/Berkeley;Berkeley;CA;USA;Edward W. Scheckler;Univ. of California/Berkeley;Berkeley;CA;USA;David M. Newmark;Univ. of California/Berkeley;Berkeley;CA;USA;Andrew R. Neureuther;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
2.Lithographic alternatives to PSM repair

机译：PSM修复的光刻替代方法
- 作者：Michael L. Rieger;Etec Systems;Inc.;Beaverton;OR;USA;Peter D. Buck;Etec Systems;Inc.;Beaverton;OR;USA;M.A. Shaw;Nikon Precision;Inc.;Belmont;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
3.Practicing the top antireflector process

机译：练习顶级防反射镜工艺
- 作者：Christopher F. Lyons;IBM/Advanced Technology Ctr.;Hopewell Junction;NY;USA;Robert K. Leidy;IBM/General Technology Div.;Essex Junction;VT;USA;Gary B. Smith;Hoechst Celanese Corp.;Sunnyvale;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
4.Shape effects of edge-line phase shifter on light intensity contrast

机译：边缘线移相器对光强度对比度的形状影响
- 作者：Mitsunori Nakatani;Mitsubishi Electric Corp.;Hyogo;Japan;Hirofumi Nakano;Mitsubishi Electric Corp.;Hyogo;Japan;Haruhiko Kusunose;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Kazuya Kamon;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Shuichi Matsuda;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Yaichirou Watakabe;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Hirozo Takano;Mitsubishi Electric Corp.;Hyogo;Japan;M.Otsubo;Mitsubishi Electric Corp.;Hyogo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
5.Strategies for deep-UV patterning of half-micron contacts using negative photoresists

机译：使用负性光刻胶对半微米触点进行深紫外图案化的策略
- 作者：Susan K. Jones;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA;Elliott S. Capsuto;SEMATECH;San Jose;CA;USA;Bruce W. Dudley;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA;Satyendra S. Sethi;SEMATECH;Santa Clara;CA;USA;Charles R. Peters;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA.
- 会议名称：《Optical/Laser Microlithography V》
6.Chromeless phase mask by resist silylation

机译：通过抗蚀剂甲硅烷基化的无铬相掩膜
- 作者：Lothar Bauch;Institut fuer Halbleiterphysik;Dresden;Federal Republic of Germany;Joachim J. Bauer;Institut fuer Halbleiterphysik;Frankfurt (Oder);Federal Republic of Germany;Helge H. Dreger;Institut fuer Halbleiterphysik;Frankfurt (Oder);Federal Republic of Germany;Ulrich A. Jagdhold;Institut fuer Halbleiterphysik;Frankfurt (Oder);Federal Republic of Germany;B.Lauche;Zentrum fuer Mikroelektronik Dresden;Dresden;Federal Republic of Germany;Georg G. Mehliss;Fotochemische Werke GmbH;Berlin;Federal Republic of Germany.
- 会议名称：《Optical/Laser Microlithography V》
7.Effect of condenser tilt on projection images produced by a phase-shifting mask

机译：聚光镜倾斜对相移掩模产生的投影图像的影响
- 作者：Tsuneo Terasawa;Hitachi Ltd.;Kokubunji;Tokyo;Japan;Norio Hasegawa;Hitachi Ltd.;Kokubunji;Tokyo;Japan;Souichi Katagiri;Hitachi Ltd.;Kokubunji;Tokyo;Japan;Katsunobu Hama;Hitachi Ltd.;Ibaraki;Japan.
- 会议名称：《Optical/Laser Microlithography V》
8.Fabrication and evaluation of chromium/phase-shifter/quartz structure phase-shift mask

机译：铬/移相器/石英结构相移掩模的制备与评价
- 作者：Tadao Yasuzato;NEC Corp.;Sagamihara;Kanagawa;Japan;Haruo Iwasaki;NEC Corp.;Sagamihara;Kanagawa;Japan;Hiroshi Nozue;NEC Corp.;Setagaya;Tokyo;Japan;Kunihiko Kasama;NEC Corp.;Sagamihara;Kanagawa;Japan.
- 会议名称：《Optical/Laser Microlithography V》
9.Fundamental differences between positive- and negative-tone imaging

机译：正负成像之间的根本区别
- 作者：Chris A. Mack;FINLE Technologies;Austin;TX;USA;James E. Connors;GCA Tropel;Fairport;NY;USA.
- 会议名称：《Optical/Laser Microlithography V》
10.Narrow band KrF excimer laser for mass production of ULSI ICs

机译：大规模生产ULSI IC的窄带KrF准分子激光器
- 作者：Hakaru Mizoguchi;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Osamu Wakabayashi;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Noritoshi Itoh;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Masahiko Kowaka;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Junichi Fujimoto;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Yukio Kobayashi;Komatsu Ltd.;Hiratsuka-shi;Kanagawa-ken;Japan;Takanobu Ishihara;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Yoshiho Amada;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan;Yasuhiro Nozue;Komatsu Ltd.;Hiratsuka-shi;Kanagawa;Japan.
- 会议名称：《Optical/Laser Microlithography V》
11.Novel 0.2-um i-line lithography using phase-shifting on the substrate

机译：在基板上使用相移的新型0.2um i线光刻
- 作者：Hiroki Tabuchi;Sharp Corp.;Tenri;Nara;Japan;Takayuki Taniguchi;Sharp Corp.;Tenri;Nara;Japan;Hiroyuki Moriwaki;Sharp Corp.;Tenri;Nara;Japan;Makoto Tanigawa;Sharp Corp.;Kitakaturagi-gun;Nara;Japan;Keiichiro Uda;Sharp Corp.;Tenri;Nara;Japan;Keizo Sakiyama;Sharp Corp.;Tenri;Nara;Japan.
- 会议名称：《Optical/Laser Microlithography V》
12.Novel process for phase-shifting mask fabrication

机译：相移掩模制造的新工艺
- 作者：Haruhiko Kusunose;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Satoshi Aoyama;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Kunihiro Hosono;Mitsubishi Electric Corp.;Itami City;Hyogo;Japan;Susumu Takeuchi;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Shuichi Matsuda;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Maaike Op de Beeck;Mitsubishi Electric Corp.;Itami City;Hyogo;Japan;Nobuyuki Yoshioka;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan;Yaichirou Watakabe;Mitsubishi Electric Corp.;Itami-shi;Hyogo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
13.Trend and limitation of process using the simulation and experimental method for phase-shift mask

机译：使用相移掩模的仿真和实验方法进行工艺的趋势和局限性
- 作者：Young Mog Ham;Hyundai Electronics Industries Co.;Ltd.;Ichon-kun;Kyongki-do Seoul;South Korea;Y.S. Kim;Hyundai Electronics Industries Co.;Ltd.;Kyongki-do;Seoul;467-867;South Korea;H.K. Oh;Hyundai Electronics Industries Co.;Ltd.;Kyongki-do;Seoul;467-867;South Korea;Dong-Joon Ahn;Hyundai Electronics Industries Co.;Ltd.;Ichon-kun;Kyoungki-do;Seoul;South Korea;K.H. Oh;Hyundai Electronics Industries Co.;Ltd.;Ichon-kun;Kyoungki-do;South Korea.
- 会议名称：《Optical/Laser Microlithography V》
14.Using multiple focal planes to enhance depth of focus

机译：使用多个焦平面来增强焦深
- 作者：Christopher A. Spence;IBM/General Technology Div.;Sunnyvale;CA;USA;Daniel C. Cole;IBM/General Technology Div.;Essex Junction;VT;USA;Barbara Peck;IBM/General Technology Div.;Essex Junction;VT;USA.
- 会议名称：《Optical/Laser Microlithography V》
15.Characterization of mask fabrication for submicron geometries using a shaped vector electron-beam system

机译：使用成形矢量电子束系统表征亚微米几何形状的掩模
- 作者：Warren W. Flack;TRW;Inc.;Los Angeles;CA;USA;David H. Dameron;TRW;Inc.;Manhattan Beach;CA;USA;Richard A. Mann;TRW;Inc.;Redondo Beach;CA;USA;Valerie J. Alameda;TRW;Inc.;Redondo Beach;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
16.Computer-aided design tool for phase-shifting masks

机译：用于相移掩模的计算机辅助设计工具
- 作者：David M. Newmark;Univ. of California/Berkeley;Berkeley;CA;USA;Andrew R. Neureuther;Univ. of California/Berkeley;Berkeley;CA;USA;Anton K. Pfau;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
17.Conjugate twin-shifter masks with multiple focal planes

机译：结合具有多个焦平面的双移位器蒙版
- 作者：Hiroshi Ohtsuka;OKI Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Toshio Onodera;OKI Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Kazuyuki Kuwahara;OKI Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Takashi Taguchi;OKI Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
18.Effect of chromatic aberration in excimer laser lithography

机译：准分子激光光刻中色差的影响
- 作者：Pei-yang Yan;Intel Corp.;Santa Clara;CA;USA;Qi-de Qian;Intel Corp.;Santa Clara;CA;USA;Joseph C. Langston;Intel Corp.;Santa Clara;CA;USA;Paco Leon;Intel Corp.;Santa Clara;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
19.High-spectral-brightness 1.0-pm bandwidth DUV lithography excimer laser

机译：高光谱亮度1.0 pm带宽DUV光刻受激准分子激光器
- 作者：Peter Lokai;Lambda Physik GmbH;Goettingen;Federal Republic of Germany;Ulrich Rebhan;Lambda Physik GmbH;Goettingen;Federal Republic of Germany;U.Stamm;Lambda Physik GmbH;Goettingen;Federal Republic of Germany;H.Buecher;Lambda Physik GmbH;Goettingen;Federal Republic of Germany;Hans J. Kahlert;Lambda Physik GmbH;Jena;Federal Republic of Germany;Dirk Basting;Lambda Physik GmbH;Goettingen;Federal Republic of Germany.
- 会议名称：《Optical/Laser Microlithography V》
20.Modeling spray/puddle dissolution processes for DUV acid-hardened resists

机译：模拟DUV酸硬化抗蚀剂的喷涂/熔池溶解过程
- 作者：John M. Hutchinson;Intel Corp.;Berkeley;CA;USA;Siddhartha Das;Intel Corp.;Santa Clara;CA;USA;Qi-de Qian;Intel Corp.;Santa Clara;CA;USA;Henry T. Gaw;Intel Corp.;Santa Clara;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
21.New antireflective layer for deep-UV lithography

机译：用于深紫外光刻的新型抗反射层
- 作者：Yurika Suda;Fujitsu Ltd.;Kawasaki;Japan;Takushi Motoyama;Fujitsu Ltd.;Kawasaki;Japan;Hideki Harada;Fujitsu Ltd.;Kawasaki;Japan;Masao Kanazawa;Fujitsu Ltd.;Kuwana-gun;Mie;Japan.
- 会议名称：《Optical/Laser Microlithography V》
22.New imaging technique for 64M-DRAM

机译：64M-DRAM的新成像技术
- 作者：Naomasa Shiraishi;Nikon Corp.;Shinagawa-ku;Tokyo;Japan;Shigeru Hirukawa;Nikon Corp.;Shinagawa-ku;Tokyo;Japan;Yuichiro Takeuchi;Nikon Corp.;Shinagawa-ku;Tokyo;Japan;Nobutaka Magome;Nikon Corp.;Shinagawa-ku;Tokyo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
23.New method of topography simulation in photolithography

机译：光刻中地形模拟的新方法
- 作者：Jorg Bischoff;Ilmenau Institute of Technology;Ilmenau;Federal Republic of Germany;Ulrich Glaubitz;OEG;Frankfurt/Oder;Federal Republic of Germany;Norbert Haase;MTG;Dresden;Federal Republic of Germany.
- 会议名称：《Optical/Laser Microlithography V》
24.Optimization of positive novolak-based resists for phase-shift mask technology

机译：正相酚醛清漆正性抗蚀剂的相移掩模技术优化
- 作者：Peggy M. Spragg;OCG Microelectronic Materials;Inc.;Tempe;AZ;USA;Giang T. Dao;Intel Corp.;Santa Clara;CA;USA;Steven G. Hansen;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Robert F. Leonard;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Medhat A. Toukhy;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Rajeev Singh;Intel Corp.;Austin;TX;USA;Kenny K. Toh;Intel Corp.;Sunnyvale;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
25.Resolution improvement with annular illumination

机译：环形照明提高分辨率
- 作者：Keiichiro Tounai;NEC Corp.;Sagamihara;Kanagawa;Japan;Hiroyoshi Tanabe;NEC Corp.;Kawasaki;Japan;Hiroshi Nozue;NEC Corp.;Setagaya;Tokyo;Japan;Kunihiko Kasama;NEC Corp.;Sagamihara;Kanagawa;Japan.
- 会议名称：《Optical/Laser Microlithography V》
26.Rigorous and practical vector model for phase-shifting masks in optical lithography

机译：光刻中相移掩模的严格实用矢量模型
- 作者：Kevin D. Lucas;Carnegie Mellon Univ.;Pittsburgh;PA;USA;Chi-Min Yuan;Carnegie Mellon Univ.;Hopewell Junction;NY;USA;Andrzej J. Strojwas;Carnegie Mellon Univ.;Pittsburgh;PA;USA.
- 会议名称：《Optical/Laser Microlithography V》
27.I-line DUV VUV or x ray?

机译：I线DUV VUV或X射线？
- 作者：Donald W. Johnson;Microlithography Consulting Co.;Inc.;Watertown;MA;USA;Chris A. Mack;FINLE Technologies;Austin;TX;USA.
- 会议名称：《Optical/Laser Microlithography V》
28.Modeling of optical images in resists by vector potentials

机译：利用矢量电势对抗蚀剂中的光学图像进行建模
- 作者：Hiroyoshi Tanabe;NEC Corp.;Kawasaki;Japan.
- 会议名称：《Optical/Laser Microlithography V》
29.Advanced krypton fluoride excimer laser for microlithography

机译：用于微光刻的高级氟化rypto准分子激光
- 作者：Toshihiko Ishihara;Cymer Laser Technologies;San Diego;CA;USA;Richard L. Sandstrom;Cymer Laser Technologies;San Diego;CA;USA;Christopher Reiser;Cymer Laser Technologies;Colorado Springs;CO;USA;Uday K. Sengupta;Cymer Laser Technologies;San Diego;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
30.Subhalf-micron lithography system with phase-shifting effect

机译：具有相移效应的半微米光刻系统
- 作者：Miyoko Noguchi;Canon Inc.;Utsunomiya-shi;Tochigi-ken;Japan;Masato Muraki;Canon Inc.;Kawasaki-shi;Kanagawa-ken;Japan;Yuuichi Iwasaki;Canon Inc.;Utunomiya;shi;Japan;Akiyoshi Suzuki;Canon Inc.;Kawasaki-shi;Kanagawa-ken;Japan.
- 会议名称：《Optical/Laser Microlithography V》
31.Understanding focus effects in submicron optical lithography: Part 3--methods for depth-of-focus improvement

机译：了解亚微米光学光刻中的聚焦效应：第3部分-改善聚焦深度的方法
- 作者：Chris A. Mack;FINLE Technologies;Austin;TX;USA.
- 会议名称：《Optical/Laser Microlithography V》
32.Novel ARC optimization methodology for KrF excimer laser lithography at low K1 factor

机译：低K1因子的KrF准分子激光光刻的新型ARC优化方法
- 作者：Tohru Ogawa;Sony Corp.;Atsugi-shi;Kanagawa-ken;Japan;Mitsunori Kimura;Sony Corp.;Kanagawa-ken;Japan;Yoichi Tomo;Sony Corp.;Kanagawa-ken;Japan;Toshiro Tsumori;Sony Corp.;Kanagawa-ken;Japan.
- 会议名称：《Optical/Laser Microlithography V》
33.Primary processes in e-beam and laser lithographies for phase-shift mask manufacturing

机译：电子束和激光光刻中用于相移掩模制造的主要工艺
- 作者：Yoichi Takahashi;Dai Nippon Printing Co. Ltd.;Saitama-ken;Japan;Hiroshi Fujita;Dai Nippon Printing Co. Ltd.;Saitama;Japan;Hisashi Moro-oka;Dai Nippon Printing Co. Ltd.;Saitama-ken;Japan;Masaaki Kurihara;Dai Nippon Printing Co. Ltd.;Saitama;Japan;Kazuo Suwa;Dai Nippon Printing Co. Ltd.;Saitama;Japan;Hisatake Sano;Dai Nippon Printing Co. Ltd.;Saitama;Japan.
- 会议名称：《Optical/Laser Microlithography V》
34.Efficient numerical simulation of high-NA i-line lithography processes

机译：高NA i线光刻工艺的高效数值模拟
- 作者：Chi-Min Yuan;IBM/East Fishkill Facility;Hopewell Junction;NY;USA;Steve S. Miura;IBM/East Fishkill Facility;Hopewell Junction;NY;USA;Nicholas K. Eib;IBM/East Fishkill Facility;Hopewell Junction;NY;USA.
- 会议名称：《Optical/Laser Microlithography V》
35.Evaluation of methods to reduce linewidth variation due to topography for i-line and deep-UV lithography

机译：对减少因i线和深紫外光刻的形貌引起的线宽变化的方法的评估
- 作者：Miles J. Gehm;Jr.;Interuniv. Micro Electronics Ctr.;Leuven;Belgium;Patrick Jaenen;Interuniv. Micro Electronics Ctr.;Leuven;Belgium;Veerle Van Driessche;Interuniv. Micro-Elektronica Centrum vzw;Leuven;Belgium;Anne-Marie Goethals;Interuniv. Micro Electronics Ctr.;Leuven;Belgium;Nandasiri Samarakone;Interuniv. Micro Electronics Ctr.;Ottawa;Ontario;Canada;Luc Van den hove;Interuniv. Micro Electronics Ctr.;Leuven;Belgium;Bart Denturck;UCB-JSR Electronics NV;Haasrode;Belgium.
- 会议名称：《Optical/Laser Microlithography V》
36.Exploring the limits of phase-shift lithography: Part I--the alternating shifter

机译：探索相移光刻技术的局限性：第一部分-交替移位器
- 作者：Shane R. Palmer;Texas Instruments Inc.;Dallas;TX;USA;Cesar M. Garza;Sr.;Texas Instruments Inc.;Dallas;TX;USA;Craig B. Sager;Benchmark Technologies;Inc.;Marblehead;MA;USA;Patrick Reynolds;Benchmark Technologies;Inc.;Marblehead;MA;USA.
- 会议名称：《Optical/Laser Microlithography V》
37.High-performance wafer stage: simplification delivers performance

机译：高性能晶圆台：简化带来性能
- 作者：John F. Cameron;Ultratech Stepper;Santa Clara;CA;USA;Jacqueline A. Seto;Ultratech Stepper;Santa Clara;CA;USA;Lawrence A. Wise;Ultratech Stepper;Santa Clara;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
38.New design of silicon organic materials and processes for microelectronics (Invited Paper)

机译：微电子学的有机硅材料和工艺的新设计（邀请论文）
- 作者：P.A. Averichkin;Institute of Physics;Technology;Moscow;Russia;A.I. Maslakov;Institute of Physics;Technology;Moscow;Russia;Kamil A. Valiev;Institute of Physics;Technology;Moscow;Russia;Leonid V. Velikov;Institute of Physics;Technology;Moscow;Russia.
- 会议名称：《Optical/Laser Microlithography V》
39.Advanced i-line resist performance with and without phase-shift masks

机译：带有和不带有相移掩模的高级i线抗蚀剂性能
- 作者：Nicholas K. Eib;IBM/East Fishkill Facility;Hopewell Junction;NY;USA;Eytan Barouch;Princeton Univ.;Princeton;NJ;USA;Uwe Hollerbach;Princeton Univ.;Princeton;NJ;USA;Steven A. Orszag;Princeton Univ.;Princeton;NJ;USA.
- 会议名称：《Optical/Laser Microlithography V》
40.Overview of lithography and process modeling: Part I--modeling of photonic processes (optical lithography x-ray lithography photoassisted chemical vapor deposition) (Invited Paper)

机译：光刻和过程建模概述：第一部分-光子过程的建模（光学光刻X射线光刻光辅助化学气相沉积）（特邀论文）
- 作者：Dmitrii R. Ilkayev;Institute of Physics;Technology;Moscow;Russia;Tariel M. Makhviladze;Institute of Physics;Technology;Moscow;Russia;Kamil A. Valiev;Institute of Physics;Technology;Moscow;Russia.
- 会议名称：《Optical/Laser Microlithography V》
41.Polarization studies with broadband deep-UV lithography

机译：宽带深紫外光刻的偏振研究
- 作者：Birol Kuyel;SEMATECH;Austin;TX;USA;Eytan Barouch;Princeton Univ.;Princeton;NJ;USA;Uwe Hollerbach;Princeton Univ.;Princeton;NJ;USA;Steven A. Orszag;Princeton Univ.;Princeton;NJ;USA.
- 会议名称：《Optical/Laser Microlithography V》
42.Process solutions for the global proximity effect on submicron lithography

机译：用于亚微米光刻的全局邻近效应的工艺解决方案
- 作者：Daniel H. Lee;Industrial Technology Research Institute;Milpitas;CA;USA;Ron Chu;ASM Lithography;Inc.;Tempe;AZ;USA.
- 会议名称：《Optical/Laser Microlithography V》
43.Solid state laser for photolithography

机译：光刻用固态激光器
- 作者：N.F. Andreev;Institute of Applied Physics;Nizhniy Novgorod;Russia;A.A. Babin;Institute of Applied Physics;Nizhniy Novgorod;Russia;N.M. Bityurin;Institute of Applied Physics;Nizhniy Novgorod;Russia;German A. Pasmanik;Institute of Applied Physics;Nizhniy Novgorod;Russia;E.A. Khazanov;Institute of Applied Physics;Nizhniy Novgorod;Russia;F.I. Feldshtein;Institute of Applied Physics;Nizhniy Novgorod;Russia.
- 会议名称：《Optical/Laser Microlithography V》
44.Systematic design of phase-shifting masks with extended depth of focus and/or shifted focus plane

机译：具有扩展焦深和/或焦平面偏移的相移掩模的系统设计
- 作者：Yong Liu;Univ. of California/Berkeley;Santa Clara;CA;USA;Anton K. Pfau;Univ. of California/Berkeley;Berkeley;CA;USA;Avideh Zakhor;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
45.Design and performance of a production-worthy excimer-laser-based ste

机译：值得生产的准分子激光STE的设计和性能
- 作者：Robert Unger;GCA-General Signal Corp.;Andover;MA;USA;Christopher Sparkes;GCA-General Signal Corp.;Andover;MA;USA;Peter A. DiSessa;GCA-General Signal Corp.;Andover;MA;USA;David J. Elliott;Cymer Laser Technologies;Wayland;MA;USA.
- 会议名称：《Optical/Laser Microlithography V》
46.Two-photon lithography for microelectronic a

机译：微电子技术的双光子光刻
- 作者：En-Shinn Wu;Univ. of Maryland Baltimore County;Catonsville;MD;USA;James H. Strickler;Cornell Univ.;Ithaca;NY;USA;W.R. Harrell;Microelectronics Research Lab.;Columbia;MD;USA;Watt W. Webb;Cornell Univ.;Ithaca;NY;USA.
- 会议名称：《Optical/Laser Microlithography V》
47.Deep-UV lithography for prototype 64-megabit DRAM fabrication

机译：用于原型64兆位DRAM制造的深紫外光刻
- 作者：Maureen A. Hanratty;Texas Instruments Inc.;Dallas;TX;USA;Michael C. Tipton;Texas Instruments Inc.;Dallas;TX;USA.
- 会议名称：《Optical/Laser Microlithography V》
48.Holographic mask-aligner

机译：全息掩模对准器
- 作者：Francis S. Clube;Holtronic Technologies;Neuchatel;Switzerland;Simon Gray;Holtronic Technologies;Neuchatel;Switzerland;Massoud Hamidi;Holtronic Technologies;Neuchatel;Switzerland;Basil A. Omar;Holtronic Technologies;Neuchatel;Switzerland;Denis Struchen;Holtronic Technologies;Neuchatel;Switzerland;Jean-Claude Tisserand;Holtronic Technologies;Neuchatel;Switzerland.
- 会议名称：《Optical/Laser Microlithography V》
49.Reduction of linewidth variation over reflective topography

机译：减少反射形地形的线宽变化
- 作者：Steve S. Miura;IBM/East Fishkill Facility;Hopewell Junction;NY;USA;Christopher F. Lyons;IBM/East Fishkill Facility;Hopewell Junction;NY;USA;Timothy A. Brunner;IBM/Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA.
- 会议名称：《Optical/Laser Microlithography V》
50.Wavelength tuning for optimization of deep-UV excimer laser performance

机译：波长调整可优化深紫外准分子激光器的性能
- 作者：Susan K. Jones;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA;Elliott S. Capsuto;SEMATECH;San Jose;CA;USA;Bruce W. Dudley;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA;Charles R. Peters;Microelectronics Ctr. of North Carolina;Research Triangle Park;NC;USA;Gary C. Escher;GCA-General Signal Corp.;Andover;MA;USA.
- 会议名称：《Optical/Laser Microlithography V》
51.Phase and transmission error study for the alternating-element (Levenson) phase-shifting mask

机译：交流（Levenson）相移掩模的相位和传输误差研究
- 作者：Ahmad D. Katnani;IBM/Technology Products Div.;Poughkeepsie;NY;USA;Burn J. Lin;IBM/Technology Products Div.;Austin;TX;USA.
- 会议名称：《Optical/Laser Microlithography V》
52.In-process image detection technique for determination of overlay and image quality for ASM-L wafer ste

机译：用于确定ASM-L晶圆Ste的覆盖和图像质量的过程中图像检测技术
- 作者：Rainer Pforr;Interuniv. Micro-Elektronica Centrum vzw;Leuven;Belgium;Stefan Wittekoek;ASM Lithography BV;Veldhoven;Netherlands;Roland Van Den Bosch;Interuniv. Micro-Elektronica Centrum vzw;Leuven;Belgium;Luc Van den hove;Interuniv. Micro-Elektronica Centrum vzw;Leuven;Belgium;Rik Jonckheere;Interuniv. Micro-Elektronica Centrum vzw;Leuven;Belgium;Theo Fahner;ASM Lithography BV;Veldhoven;Netherlands;Rolf Seltmann;Fraunhofer Institut fuer Mikroelektronische Schaltung en und System;Dresden;Federal Republic of Germany.
- 会议名称：《Optical/Laser Microlithography V》
53.Evaluation of high-numerical-aperture wide-field ste

机译：高数值孔径宽视场的评估
- 作者：Barton A. Katz;ASM Lithography;Inc.;Tempe;AZ;USA;James S. Greeneich;ASM Lithography;Inc.;Tempe;AZ;USA;Richard Rogoff;ASM Lithography;Inc.;Tempe;AZ;USA;Steve D. Slonaker;ASM Lithography;Inc.;Tempe;AZ;USA;Stefan Wittekoek;ASM Lithography BV;Veldhoven;Netherlands;Paul F. Luehrmann;Jr.;ASM Lithography BV;Veldhoven;Netherlands;Martin A. van den Brink;ASM Lithography BV;Veldhoven;Netherlands;Douglas R. Ritchie;ASM Lithography BV;Veldhoven;Netherlands.
- 会议名称：《Optical/Laser Microlithography V》
54.Improving stepper alignment capability through phase-shifting techniques,

机译：通过相移技术提高步进器对准能力，
- 作者：Mircea V. Dusa;SEEQ Technology;Inc.;San Jose;CA;USA;Maciej W. Rudzinski;Nikon Precision;Inc.;San Jose;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
55.Intermix technology: the key to optimal ste

机译：Intermix技术：最佳Ste的关键
- 作者：Mark A. Perkins;Intel Corp.;Chandler;AZ;USA;Jonathan Stamp;Ultratech Stepper;Santa Clara;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
56.Resolution enhancement of stepper by complementary conjugate spatialfilter,

机译：通过互补共轭空间滤波器提高步进器的分辨率，
- 作者：Minori N. Noguchi;Hitachi;Ltd.;Totsuka-ku;Yokohama;Japan;Yasuhiro Yoshitake;Hitachi;Ltd.;Totsuka-ku;Yokohama;Japan;Yukio Kembo;Hitachi;Ltd.;Yokohama;Japan.
- 会议名称：《Optical/Laser Microlithography V》
57.Small-field stepper for 193-nm lithography process development,

机译：用于193 nm光刻工艺开发的小场步进器，
- 作者：David C. Shaver;Lincoln Lab./MIT;Lexington;MA;USA;D.M. Craig;Lincoln Lab./MIT;Lexington;MA;USA;C.A. Marchi;Lincoln Lab./MIT;Lexington;MA;USA;Mark A. Hartney;Lincoln Lab./MIT;Lexington;MA;USA;Francis N. Goodall;Rutherford Appleton Lab.;Chilton Didcot;Oxon;United Kingdom.
- 会议名称：《Optical/Laser Microlithography V》
58.Two-dimensional high-resolution ste

机译：二维高分辨率Ste
- 作者：Anton K. Pfau;Univ. of California/Berkeley;Berkeley;CA;USA;Richard Hsu;Univ. of California/Berkeley;Berkeley;CA;USA;William G. Oldham;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
59.Some problems in 1:1 broadband excimer laser lithography

机译：1：1宽带准分子激光光刻中的一些问题
- 作者：Haixing Zou;Shanghai Institute of Optics;Fine Mechanics;Shanghai;China;Yudong Zhang;Shanghai Institute of Optics;Fine Mechanics;Fuzhou;Fujian;China.
- 会议名称：《Optical/Laser Microlithography V》
60.Color centers photomasks produced by electron-beam lithography

机译：电子束光刻产生的色心光掩模
- 作者：Raul A. Nunes;Pontifical Catholic Univ. of Rio de Janeiro;Rio de Janeiro RJ;Brazil;Sidnei Paciornik;Pontifical Catholic Univ. of Rio de Janeiro;Rio de Janeiro RJ;Brazil;Luiz C. Scavarda do Carmo;Pontifical Catholic Univ. of Rio de Janeiro;Rio de Janeiro;RJ;Brazil.
- 会议名称：《Optical/Laser Microlithography V》
61.Characterization and performance of advanced i-line photoresists for 0.5-micron CMOS technology

机译：适用于0.5微米CMOS技术的高级i线光刻胶的特性和性能
- 作者：Jeffrey R. Johnson;SGS-Thomson Microelectronics;Inc.;Carrollton;TX;USA;Gregory J. Stagaman;SGS-Thomson Microelectronics;Inc.;Carrollton;TX;USA;John C. Sardella;SGS-Thomson Microelectronics;Inc.;Carrollton;TX;USA;Charles R. Spinner;III;SGS-Thomson Microelectronics;Inc.;Carrollton;TX;USA;F.T. Liou;SGS-Thomson Microelectronics;Inc.;Carrollton;TX;USA.
- 会议名称：《Optical/Laser Microlithography V》
62.Planarization of spin-coated films

机译：旋涂膜的平面化
- 作者：Loni M. Peurrung;Univ. of California/Berkeley;Livermore;CA;USA;David B. Graves;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
63.Alignment technique using wafer rear surface

机译：使用晶圆背面的对准技术
- 作者：Souichi Katagiri;Hitachi Central Research Lab.;Kokubunji;Tokyo;Japan;Shigeo Moriyama;Hitachi Central Research Lab.;Kokubunji;Tokyo;Japan;Tsuneo Terasawa;Hitachi Central Research Lab.;Kokubunji;Tokyo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
64.Computer-aided optimal design of phase-shifting masks

机译：移相掩模的计算机辅助优化设计
- 作者：Chih-Yuan Chang;Stanford Univ.;Stanford;CA;USA;Charles D. Schaper;Stanford Univ.;Stanford;CA;USA;Thomas Kailath;Stanford Univ.;Stanford;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
65.New process technology for CD control in deep-submicron optical lithography

机译：深亚微米光学光刻中CD控制的新工艺技术
- 作者：Aritoshi Sugimoto;Hitachi;Ltd.;Gunma;Japan;Osamu Suga;Hitachi;Ltd.;Kodairashi;Tokyo;Japan;Kazuyuki Suko;Hitachi;Ltd.;Kodaira-shi;Tokyo;Japan;Hitoshi Arakawa;Hitachi;Ltd.;Kodaira-shi;Tokyo;Japan.
- 会议名称：《Optical/Laser Microlithography V》
66.Polarization effects in mask transmission

机译：掩模透射中的偏振效应
- 作者：Alfred K. Wong;Univ. of California/Berkeley;Berkeley;CA;USA;Andrew R. Neureuther;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Optical/Laser Microlithography V》
67.Lithographic impact of thin film effects on advanced BIMOS semiconductor device layer structures

机译：薄膜效应对高级BIMOS半导体器件层结构的光刻影响
- 作者：Fourmun Lee;Motorola;Inc.;Mesa;AZ;USA;Sandeep Malhotra;Motorola;Inc.;Mesa;AZ;USA;Victor Louis;Motorola;Inc.;Mesa;AZ;USA;John N. Helbert;Motorola;Inc.;Mesa;AZ;USA.
- 会议名称：《Optical/Laser Microlithography V》
68.Laser-induced damage in pellicles at 193 nm

机译：激光对防护膜的193 nm损伤
- 作者：Mordechai Rothschild;Lincoln Lab./MIT;Lexington;MA;USA;Jan H. Sedlacek;Lincoln Lab./MIT;Lexington;MA;USA.
- 会议名称：《Optical/Laser Microlithography V》
69.Novel laser microlithography system

机译：新型激光微光刻系统
- 作者：Guan-Qun Shen;Shanghai Institute of Laser Technology;Shanghai;China;Binchu Wu;Shanghai Institute of Laser Technology;Shanghai;China;Kangzhe Cai;Shanghai Institute of Laser Technology;Shanghai;China;Xuanshao Huang;Shanghai Institute of Laser Technology;Shanghai;China;Paiqi Cao;Shanghai Institute of Laser Technology;Shanghai;China.
- 会议名称：《Optical/Laser Microlithography V》