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Metrology, Inspection, and Process Control for Microlithography XVII

召开年：2003
召开地：Santa Clara, CA(US)
出版时间：-

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1.Making Carbon Nanotube Probes for High Aspect Ratio Scanning Probe Metrology

机译：制作用于高纵横比扫描探针计量学的碳纳米管探针
- 作者：Y. N. Emirov;M. Beerbom;D. A. Walters;Z. F. Ren;Z.P. Huang;B. B. Rossie;R. Schlaf
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
2.Overlay Considerations for 300mm Lithography

机译：300mm光刻的叠加注意事项
- 作者：Tobias Mono;Uwe Paul Schroeder;Dieter Nees;Katrin Palitzsch;Wolfram Koestler;Jens Bruch;Sirko Kramp;Markus Veldkamp;Ralf Schuster
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- 300mm;
- lithography;
- overlay;
- process-induced;
- systematical overlay error;
3.CD-SEM Image Acquisition Effects on 193nm Resists Line Slimming

机译：CD-SEM图像采集对193nm电阻线细化的影响
- 作者：N. Sullivan;M. Mastovich;S. Bowdoin;R. Brandom
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
4.FTIR-based non-destructive method for metrology of depths in poly silicon filled trenches

机译：基于FTIR的多晶硅填充沟槽深度计量的无损方法
- 作者：Shoaib Zaidi;George Stojakovic;Alois Gutmann;Cornel Bozdog;Ulrich Mantz;Sylvie Bosch Charpenay;Peter Rosenthal
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- FTIR;
- poly recess depth;
- trench;
- vertical transistor;
- DRAM;
- metrology;
- SEM;
- 110 nm;
- 90 nm;
- 50 nm;
- scatterometry;
5.Effect of bias variation on total uncertainty of CD measurements

机译：偏差变化对CD测量总不确定度的影响
- 作者：Vladimir A. Ukraintsev
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- CD metrology;
- precision;
- P/T;
- measurement bias;
- line profile;
- CD SEM;
- CD AFM;
6.Microscope Illumination Systems for 157 nm

机译：157 nm的显微镜照明系统
- 作者：Alexander Pesch;Kristina Uhlendorf;Arnaud Deparnay;Lars Erdmann;Peter Kuschnerus;Thomas Engel;Robert Brunner
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- homogenization;
- 157 nm excimer laser;
- speckle reduction;
7.New method for the quantitative evaluation of wafer pattern shape based on CAD data

机译：基于CAD数据的晶圆图案形状定量评估的新方法
- 作者：Ryoichi Matsuoka;Masanori Takahashi;Atsushi Uemoto
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- CAD data;
- pattern shape evaluation;
- SEM;
8.Portable phase measuring interferometer using Shack-Hartmann method

机译：使用Shack-Hartmann方法的便携式相位测量干涉仪
- 作者：Toru Fujii;Jun Kougo;Yasushi Mizuno;Hiroshi Ooki;Masato Hamatani
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- on-body lens inspection;
- wave-front aberration;
9.The Challenges of Image Placement and Overlay at the 90nm and 65nm Nodes

机译：在90nm和65nm节点上图像放置和覆盖的挑战
- 作者：Walter J. Trybula
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
10.UV Scatterometry

机译：紫外散射法
- 作者：Petre C. Logofatu
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- sensitivity;
- grating anomalies;
- ellipsometry;
- phase modulation;
11.A New Methodology to Specify Via and Contact Layer Reticles for Maximizing Process Latitude

机译：指定通孔和接触层掩模版的新方法，可最大程度地提高工艺范围
- 作者：Kirk Strozewski;Joe Perez;Anthony Vacca;Art Klaum;Keith Brankner
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
12.A novel diffraction based spectroscopic method for overlay metrology

机译：一种新颖的基于衍射的光谱学叠加测量方法
- 作者：Weidong Yang;Roger Lowe-Webb;Silvio Rabello;Jiangtao Hu;Je-Yi Lin;John Heaton;Mircea Dusa;Arie den Boef;Maurits van der Schaar;Adolph Hunter
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay metrology;
- diffraction efficiency;
- spectrum;
- process control;
- optical metrology;
- diffraction;
- OCD;
- scatterometry;
13.Aerial Image Based Mask Inspection - A Development Effort to Detect What Might Impact Printing Image Quality on Wafers

机译：基于航空影像的掩模检查-一种开发工作，以检测可能影响晶圆上印刷图像质量的因素
- 作者：Roman Liebe;Henning Haffner;Shirley Hemar;Anja Rosenbusch;Jerry Chen;Franklin Kalk
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- aerial image based mask inspection;
- 193nm technology;
- OPC;
- AAPSM;
- AIMS;
- UIS10;
- MEEF;
14.Application of Simulation Based Defect Printability Analysis for Mask' Qualification Control

机译：基于仿真的缺陷可印性分析在掩模质量控制中的应用
- 作者：Jerry Lu;Alex Lu;Linyong Pang;Don Lee;Jiunn-Hung Chen
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- defect;
- inspection;
- wafer;
- printability;
- OPC;
- optical;
- proximity;
- correction;
- assist;
- assistant bar;
- CD;
- critical dimension;
- simulation;
- virtual stepper;
- subwavelength;
- feature;
- mask;
- photomask;
- quality;
15.Applications of angular scatterometry for the measurement of multiply-periodic features

机译：角散射法在多周期特征测量中的应用
- 作者：Christopher J. Raymond;Mike Littau;Byungjoo Youn;Chang-Jin Sohn;Jin Ah Kim;Young Seog Kang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- optical;
- metrology;
- diffract;
- CD;
- lithography;
- memory;
- contact;
- hole;
16.Characterization of Overlay Mark Fidelity

机译：叠加标记保真度的表征
- 作者：Mike Adel;Mark Ghinovker;Jorge Poplawski;Elyakim Kassel;Pavel Izikson;Ivan Pollentier;Philippe Leray;David Laidler
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- misregistration;
- process robustness;
- fidelity;
17.Concept of ultra-fast at-wavelength inspection of defects on multilayer mask blanks using a laser-produced plasma source

机译：使用激光产生的等离子体源超快速波长检查多层掩模坯料上的缺陷的概念
- 作者：Toshihisa TOME;Tsuneo Terasawa;Yoshihiro Tezuka;Masaaki Ito
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
18.New Atomic Force Microscope Method for Critical Dimension Metrology

机译：临界尺寸计量学的新原子力显微镜方法
- 作者：Takafumi Morimoto;Toru Shinaki;Yukio Kembo;Sumio Hosaka
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- AFM;
- SPM;
- critical dimension metrology;
- CD-AFM;
- step-in mode;
- high aspect ratio;
- nanometer;
- in-line monitor;
19.New criterion about the topography of W-CMP wafer's alignment mark

机译：W-CMP晶圆对准标记的形貌新判据
- 作者：Hideki Ina;Takahiro Matsumoto;Koichi Sentoku;Katsuhiro Matsuyama;Kazuhiko Katagiri
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- alignment;
- WIS;
- topography;
- profile;
- AFM;
- rotation error;
20.NIST-Traceable Calibration of CD-SEM Magnification Using a 100 nm Pitch Standard

机译：使用100 nm间距标准品进行CD-SEM放大倍数的NIST跟踪校准
- 作者：M. Tortonese;Y. Guan;J. Prochazka
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- pitch;
- 100 nm;
- CD-SEM;
- metrology;
- litho metrology;
- NIST-traceability;
21.Run-to-Run CD Error Analysis and Control with Monitoring of Effective Dose and Focus

机译：运行到运行的CD错误分析和控制，并监视有效剂量和焦点
- 作者：Masafumi Asano;Tadahito Fujisawa;Kyoko Izuha;Soichi Inoue
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- effective dose;
- effective focus;
- monitor;
- CD control;
- run-to-run;
22.Simultaneous Dose and Focus Monitoring On Product Wafers

机译：同时对产品晶圆进行剂量和焦点监控
- 作者：Brad Eichelberger;Berta Dinu;Hai Pedut
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- focus;
- dose;
- exposure;
- inline;
- process monitoring;
23.A New Method to Enhance Overlay Tool Performance

机译：增强叠加工具性能的新方法
- 作者：Ravikiran Attota;Richard M. Silver;Michael Stocker;Egon Marx;Jay Jun;Mark Davidson;Robert Larrabee
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay metrology;
- optical interactions;
- TIS;
- truncation;
- window size;
- optimization;
24.Application of Scatterometry for CD and Profile Metrology in 193nm Lithography Process Development

机译：CD和轮廓计量散射法在193nm光刻工艺开发中的应用。
- 作者：Li-Jui Chen;Chih-Ming Ke;Shinn-Sheng Yu;Tsai-Sheng Gau;Pei-Hung Chen;Yao-Ching Ku;Burn J. Lin;Dan Engelhard;Dave Hetzer;Jason Yang;Kelly Barry;Lip Yap;Wenge Yang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- CD metrology;
- spectroscopic ellipsometry;
- diffraction grating;
25.CD Control at Low K1 Optical Lithography in DRAM Device

机译：DRAM器件在低K1光学光刻下的CD控制
- 作者：Jongkyung Hong;Chongsik Woo;Jaewoo Park;Byeong-ho Cho;Jaeseung Choi;Hyunjo Yang;Chan-ha Park;Yong-Chul Shin;Youngdea Kim;Goomin Jeong;Jung-chan Kim;Khil-ohk Kang;Chunsoo Kang;Jongwoon Park;Donggyu Yim;Youngwook Song
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- low K1;
- aberration sensitivity;
- pattern asymmetry;
- CD uniformity;
- ISI (in-situ interferometer);
26.Characterization of photoresist spatial resolution by interferometric lithography

机译：光刻法表征光刻胶的空间分辨率
- 作者：John A. Hoffnagle;William D. Hinsberg;Prances A. Houle;Martha I. Sanchez
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- photoresist;
- modulation transfer function;
- materials characterization;
- interferometric lithography;
27.Enhancing Yield and Productivity with Process Control Applications for Contact and Via Module

机译：通过用于触点和通孔模块的过程控制应用程序来提高产量和生产率
- 作者：S. Majoni;I. Englard
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- metrology;
- CD SEM;
- profile grade;
- contact analysis;
- stepper throughput;
28.Improved Gate Process Control at the 130nm Node Using Spectroscopic Ellipsometry Based Profile Metrology

机译：使用基于光谱椭偏仪的轮廓测量技术改进了130nm节点的栅极工艺控制
- 作者：J. Scott Hodges;Yu-Lun (Chris) Lin;Dale R. Burrows;Ray H. Chiao;Robert M. Peters;Srinivasan Rangarajan;Kamal Bhatia;Suresh Lakkapragada
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- spectroscopic ellipsometry;
- critical dimension (CD);
- metrology;
- 300mm production;
29.Overlay metrology simulations - Analytical and experimental validations

机译：叠加计量模拟-分析和实验验证
- 作者：Joel L. Seligson;Boris Golovanevsky;Jorge M. Poplawski;Mike E. Adel;Richard M. Silver
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- simulation;
- overlay;
- misregistration;
30.Scatterometry As a Practical in situ Metrology Technology

机译：散射法作为一种实用的现场计量技术
- 作者：Eytan Barouch;Stephen L. Knodle
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- inverse-scattering;
- silicon-material-properties;
31.Sub-nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-ray Scattering

机译：平版印刷结构的亚纳米波长计量：中子和X射线散射的比较
- 作者：Ronald L. Jones;Tengjiao Hu;Eric K. Lin;Wen-li Wu;Diego M. Casa;Ndubuisi G. Orji;Theodore V. Vorburger;Patrick J. Bolton;George Barclay
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- CD metrology;
- X-ray scattering;
- sub-100 nm lithography;
32.193 nm Resist: Ultra Low Voltage CDSEM Performance for sub-130 nm Contact Hole Process

机译：193 nm电阻：用于130 nm以下接触孔工艺的超低压CDSEM性能
- 作者：J. Ferri;M. Vieira;M. Reybrouck;M. Mastovich;S. Bowdoin;R. Brandom;P. Knutrud
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
33.A New Laboratory EUV Reflectometer for Large Optics using a Laser Plasma Source

机译：使用激光等离子源的大型光学新型实验室EUV反射仪
- 作者：Ludwig van Loyen;Thomas Boettger;Stefan Braun;Hermann Mai;Andreas Leson;Frank Scholze;Johannes Tuemmler;Gerhard Ulm;Herbert Legall;Peter V. Nickles;Wolfgang Sandner;Holger Stiel;Christian Rempel;Mirko Schulze;Joerg Brutscher;Fritz Macco
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- extreme ultraviolet;
- metrology;
- lithography;
- at-wavelength characterization;
- reflectometry;
34.A New Way of Handling Dimensional Measurement Results for Integrated Circuit Technology

机译：处理集成电路技术尺寸测量结果的新方法
- 作者：Andras E. Vladar;John S. Villarrubia;Michael T. Postek
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- critical dimension;
- CD;
- SEM;
- metrology;
- measurement;
- uncertainty;
- error;
- accuracy;
- precision;
35.Calibration and validation of projection lithography in chemically amplified resist systems using fluorescence imaging

机译：使用荧光成像的化学放大抗蚀剂系统中投影光刻的校准和验证
- 作者：Michael D. Mason;Krishanu Ray;Gilbert D. Feke;Robert D. Grober;Gerd Pohlers;James F. Cameron
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
36.Characterization of Line-Edge Roughness in Resist Patterns and Estimation of its Effect on Device Performance

机译：电阻图案中线边缘粗糙度的表征及其对器件性能的影响的估计
- 作者：Atsuko Yamaguchi;Ryuta Tsuchiya;Hiroshi Fukuda;Osamu Komuro;Hiroki Kawada;Takashi Iizumi
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- line edge roughness;
- CD-SEM;
- measurement parameter;
- device performance;
37.Characterizing and Understanding Stray Tilt: The Next Major Contributor to CD SEM Tool Matching

机译：表征和理解杂散倾斜：CD SEM工具匹配的下一个主要贡献者
- 作者：Eric Solecky;Chas Archie;Jason Mayer;Roger Cornell;Ofer Adan
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- CD SEM;
- matching;
- precision;
- stray tilt;
38.Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage

机译：193 nm的电子束计量学可在超低压下抵抗
- 作者：N. Sullivan;R. Dixson;B. Bunday;M. Mastovich;P. Knutrud;P. Fabre;R. Brandom
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
39.Evaluation of Alignment Target Designs for Cu and Low K Dual Damascene Processes

机译：铜和低K双镶嵌工艺的对准目标设计评估
- 作者：Moitreyee Mukherjee-Roy;Navab Singh;Sohan. S. Mehta;Chik Wai Meng;Sim Chin Tiong;Francis Cheong
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- alignment;
- overlay;
- target;
- misregistration;
- photolithography;
- low K dielectric;
- damascene;
40.Improved Model for Focus-Exposure Data Analysis

机译：焦点曝光数据分析的改进模型
- 作者：Chris A. Mack;Jeffrey D. Byers
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- focus-exposure matrix;
- process window;
- data analysis;
- ProDATA;
41.Lithography and Metrology Overlay Troubleshooting by Advanced Query and Multivariate Analysis

机译：通过高级查询和多元分析进行光刻和计量覆盖故障排除
- 作者：Bernd Schulz;Jens Krause;John C. Robinson;Craig MacNaughton
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- multivariate analysis;
42.Simulation of Repairing Thin Film Phase Defect in Masks for EUV Lithography

机译：修复EUV光刻掩模中的薄膜相缺陷的模拟
- 作者：Yeong-Uk Ko;David C. Joy;Scott Hector;Bing Lu
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
43.Spectroscopic Ellipsometry for lithography front-end level CD control: a complete analysis for production integration

机译：光谱椭偏仪用于光刻前端CD控制：用于生产集成的完整分析
- 作者：David Herisson;Daniele Neira;Cyril Fernand;Philippe Thony;Daniel Henry;Stephanie Kremer;Marco Polli;Marco Guevremont;Assim Elazami
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- critical dimension;
- lithography control;
- ellipsometry;
44.An Improved Method to Determine Optimal Alignment Sampling Layouts

机译：确定最佳对准采样布局的一种改进方法
- 作者：Simon Chang;Stephen DeMoor;Jay Brown;Chris Atkinson;Josh Roberge
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- alignment;
- sampling layout;
- scan direction;
- stage synchronization;
45.Characterization of charging in CDSEM for 90-nm metrology and beyond

机译：CDSEM中90纳米及以上计量的电荷表征
- 作者：Li-Jui Chen;Shang-Wei Lin;Tsai-Sheng Gau;Burn J. Lin
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- CDSEM;
- charging;
- OPE;
46.Contact hole inspection by real-time optical CD metrology

机译：实时光学CD计量的接触孔检查
- 作者：J. Opsal;H. Chu;Y. Wen;G. Li;Y. C. Chang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- contact hole;
- real-time;
- critical dimension;
- scatterometry;
- metrology;
47.Demonstration of imaging interferometric microscopy (IIM)

机译：成像干涉显微镜（IIM）演示
- 作者：Christian J. Schwarz;Yuliya Kuznetsova;S. R. J. Brueck
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
48.Identification and Quantitative Analysis of Contaminants Found in Photolithography Purge Gases

机译：光刻吹扫气体中污染物的鉴定和定量分析
- 作者：Allan Tram;Jeffrey J. Spiegelman;Russell J. Holmes;Daniel Alvarez;Dan Lev
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
49.Implementation and benefits of advanced process control for lithography CD and overlay

机译：光刻CD和覆盖层的高级过程控制的实施和优势
- 作者：Lena Zavyalova;Chong-Cheng Fu;Gary Seligman;Perry Tapp;Victor Pol
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
50.Performance Study of New Segmented Overlay Marks for Advanced Wafer Processing

机译：用于先进晶圆加工的新分段重叠标记的性能研究
- 作者：M. Adel;J.A. Allgair;D. C. Benoit;M. Ghinovker;E. Kassel;C. Nelson;J. C. Robinson;G. S. Seligman
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- optical metrology;
- grating target;
- overlay mark;
- box-in-box;
51.Top Down Versus Cross Sectional SEM Metrology and its Impact on Lithography Simulation Calibration

机译：自上而下与横截面SEM计量学及其对光刻模拟校准的影响
- 作者：Robert Jones;Jeffrey Byers;Will Conley
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- lithography;
- simulation;
- top down;
- cross section;
- CDSEM;
- bias;
52.The End of the Semiconductor Industry as We Know It

机译：我们所知道的半导体行业的终结
- 作者：Chris A. Mack
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- moore's law;
- learning curve;
53.A Simulation Study of Repeatability and Bias in the CD-SEM

机译：CD-SEM中可重复性和偏差的仿真研究
- 作者：J. S. Villarrubia;A. E. Vladar;M. T. Postek
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
54.Accuracy in CD-SEM Metrology

机译：CD-SEM计量学的准确性
- 作者：A. V. Nikitin;A. Sicignano;D. Y. Yeremin;M. Sandy;T. Goldburt
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- accuracy;
- precision;
- CD-SEM metrology;
- threshold;
- linear approximation;
- edge localization;
55.Accuracy Limitations in Specular-Mode Optical Topography Extraction

机译：镜面模式光学形貌提取中的精度限制
- 作者：Fred Lewis Terry;Jr.
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
56.Comparison of Pattern Placement Errors as Measured using Traditional Overlay Targets and Design Rule Structures

机译：使用传统重叠目标和设计规则结构测量的图案放置错误的比较
- 作者：Philippe Leray;David Laidler;Ivan Pollentier
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- distortion;
- pattern placement error;
- CD SEM overlay metrology;
- precision;
57.Critical Dimension Metrology for Sub-150nm Lithographic Films Using Real-Time Scatterometry

机译：使用实时散射法测量低于150nm光刻胶片的临界尺寸计量
- 作者：Michael J. Anderson
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- 193 nm;
- scatterometry;
- lithography;
- critical dimension;
- CD metrology;
58.Cross-sectional gate feature identification using top-down SEM images

机译：使用自上而下的SEM图像进行横断面特征识别
- 作者：Maki Tanaka;Chie Shishido;Yuji Takagi;Hidetoshi Morokuma;Osamu Komuro;Hiroyoshi Mori
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
59.Electrical linewidth metrology for systematic CD variation characterization and causal analysis

机译：用于系统CD变化特征和因果分析的电气线宽计量
- 作者：Jason P. Cain;Costas J. Spanos
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- electrical linewidth metrology;
- critical dimension variation;
- CD variation;
- optimum sampling plan;
- photolithography;
60.Energy Flux Method for Inspection of Contact and VIA Layer Reticles

机译：能量通量法检查接触和VIA层掩模版
- 作者：Hector Garcia;William Volk;Yalin Xiong;Sterling Watson;Zongchang Yu;Zhian Guo;Lantian Wang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
61.Nano precision AFM imaging by stereo deconvolution: theory, applications and experimental validation

机译：立体反卷积的纳米精密AFM成像：理论，应用和实验验证
- 作者：B. D. Aumond;K. Youcef-Toumi
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- metrology;
- profilometer;
- atomic force microscope;
- deconvolution;
- stereo imaging;
62.New Apparent Beam Width Artifact and Measurement Methodology for CDSEM Resolution Monitoring

机译：用于CDSEM分辨率监测的新的表观光束宽度伪像和测量方法
- 作者：Jason A. Mayer;Kylee J. Huizenga;Eric P. Solecky;Charles N. Archie;George W. Banke Jr.;Robert M.Cogley;Claudine Nathan;James M. Robert
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- apparent beam width (ABW);
- variance;
- resolution;
- critical dimension measurement;
- artifact;
- line edge roughness (LER);
- matching;
63.Optimizing Reticle Inspection for the X Architecture

机译：为X体系结构优化光罩检查
- 作者：Chris Aquino
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
64.Real-time optical CD metrology for litho process

机译：用于光刻工艺的实时光学CD计量
- 作者：J. L. Opsal;Y. Wen;J. Lee;W. L. Smith
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- real-time;
- CD;
- metrology;
- scatterometry lithography;
65.Scatterometry-Based Overlay Metrology'

机译：基于散射的叠加计量学
- 作者：Hsu-Ting Huang;Gayathri Raghavendra;Apo Sezginer;Kenneth Johnson;Fred Stanke;Michelle Zimmerman;Cristina Cheung;Makoto Miyagi;Bhanwar Singh
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- overlay;
- alignment;
- scatterometry;
- grating;
66.Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

机译：基于光谱椭偏仪的散射仪，可对110nm及以后的工艺节点实现193nm光刻和蚀刻工艺控制
- 作者：Thomas Hingst;Thomas Marschner;Manfred Moert;Jan Homilius;Marco Guevremont;John Hopkins;Assim Elazami
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- spectroscopic ellipsometry;
- CD;
- DRAM;
- gate control;
67.Updated NIST Photomask Linewidth Standard

机译：更新了NIST光掩模线宽标准
- 作者：James Potzick;J. Marc Pedulla;Mike Stacker
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- metrology;
- linewidth;
- photomask;
- traceability;
- standard;
68.Optimization of Align Marks and Overlay Targets in VIA First Dual Damascene Process

机译：威盛第一双镶嵌工艺中对准标记和覆盖目标的优化
- 作者：Dae-Ung Shin;Young-Bae Jeong;Jeong-Lyeol Park;Jae-Sung Choi;Jeong-Gun Lee;Dai- Hoon Lee
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- alignment;
- overlay;
- image contrast;
- dual damascene;
69.Quantitative Profile-Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control and Several Different CMOS Features

机译：CD-SEM的定量轮廓形状测量研究及其在蚀刻偏置控制和几种不同CMOS特性中的应用
- 作者：Benjamin D. Bunday;Michael Bishop;John R. Swyers;Kevin Lensing
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
70.Calibration Strategies for Overlay and Registration Metrology

机译：覆盖和配准计量的校准策略
- 作者：R. M. Silver;M. Stocker;R. Attota;M. Bishop;J. Jun;E. Marx;M. Davidson;R. Larrabee
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
71.CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography

机译：193 nm平版印刷的线边缘粗糙度测试图案的CD-SEM测量
- 作者：Benjamin D. Bunday;Michael Bishop;John S. Villarrubia;Andras E. Vladar
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
72.Implementation of a Reference Measurement System using CD-AFM

机译：使用CD-AFM实现参考测量系统
- 作者：Ronald Dixson;Angela Guerry;Marylyn Bennett;Theodore Vorburger;Ben Bunday
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- AFM;
- metrology;
- CD;
- linewidth;
- reference measurement system;
- standards;
- calibration;
- traceability;
73.Potentials for High-Pressure/Environmental SEM Microscopy for Photomask Dimensional Metrology

机译：用于光掩模尺寸计量的高压/环境SEM显微镜的潜力
- 作者：Michael T. Postek;Andras E. Vladar;Trisha Rice;Ralph Knowles
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- critical dimension;
- high-pressure;
- environmental microscopy;
- metrology;
- SEM;
- scanning electron microscopy;
74.Scatterometry measurement precision and accuracy below 70 nm

机译：散射测量的精度和准确度低于70 nm
- 作者：Matthew Sendelbach;Chas Archie
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVII》 | 2003年
- scatterometry;
- precision;
- accuracy;
- 3D metrology;
- reference measurement system;
- RMS;
- CD-SEM;
- CD-AFM;
- total measurement uncertainty;
- TMU;