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Analysis of Passive Charge Sharing-Based Segmented SAR ADCs

机译:基于被动充电共享分段SAR ADC分析

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摘要

This article presents the theoretical analysis of passive charge sharing-based segmented successive-approximation-register (SAR) analog-to-digital converter (ADC), where the precise reference source in a capacitive digital-to-analog converter (CDAC) is replaced by a capacitor that is eta times larger than its bit capacitor and precharged to the reference level, known as a reference charge reservoir (RCR). A segmented SAR-ADC uses a coarse SAR-ADC to compute some most significant bits (MSBs). Four methods, namely aligned switching (AS) with bitwise RCRs, AS with a subsample-wise RCR, detect-and-skip aligned switching (DAS-AS) with bitwise RCRs, and DAS-AS with a subsample-wise RCR are introduced for setting fine MSBs. Closed-form analytic expressions of the reference error due to the finite reference capacitance are derived and validated by behavioral modeling and circuit simulation of an 11-bit 50 MS/s segmented SAR ADC in 65-nm CMOS technology. The error expressions can be used to select one of the four methods for setting the fine MSBs and to determine eta for the required linearity or for implementing digital circuitry for precise error correction.
机译:本文介绍了基于被动充电共享的分段连续近似寄存器(SAR)模数转换器(ADC)的理论分析,其中更换了电容式数字转换器(CDAC)中的精确参考源通过比其位电容大的β倍增的电容器,并将其称为参考电平,称为参考电平储库(RCR)。分段的SAR-ADC使用粗SAR-ADC来计算一些最高有效的位(MSB)。用位向RCR的四种方法,即用位RCR,与按位RCR检测和跳过对齐的切换(DAS-AS)和DAS - 与Subsample-Wise RCR一起进行对齐的切换(AS)。设置细MSB。通过在65-NM CMOS技术中的11位50 ms / s分段SAR ADC的行为建模和电路模拟来导出和验证引起的参考误差的闭合形式分析表达式。错误表达式可用于选择用于设置细MSB的四种方法之一,并确定所需线性度的 Beta或用于实现数字电路以精确纠错。

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