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Static energy reduction techniques for microprocessor caches

机译:微处理器高速缓存的静态节能技术

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Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.
机译:通过增加片上缓存的容量,提高了微处理器的性能。然而,由于高速缓存存储器阵列中的亚阈值泄漏电流,因此性能提高是以静态能量消耗为代价的。本文比较了三种降低片上1级和2级高速缓存静态功耗的技术。一种技术是在存储单元中采用低泄漏晶体管。电源切换是另一种技术,可用于关闭存储单元并丢弃其内容。第三种选择是动态阈值调制,它将存储单元置于待机状态,以保留单元内容。在我们的实验中,我们探索了这些技术在能量和性能上的取舍。我们还研究了微处理器性能和能耗对减少泄漏技术导致的额外缓存延迟的敏感性。

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