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首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >AWARE (Asymmetric Write Architecture With REdundant Blocks): A High Write Speed STT-MRAM Cache Architecture
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AWARE (Asymmetric Write Architecture With REdundant Blocks): A High Write Speed STT-MRAM Cache Architecture

机译:AWARE(具有冗余块的非对称写入体系结构):高写入速度STT-MRAM缓存体系结构

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Spin-transfer torque magnetic RAM (STT-MRAM) is a promising memory technology for lower level caches because of its high density and nonvolatile nature. However, the high write latency is a bottleneck to its widespread adoption as the future on-chip memory. In this paper, we propose a new cache architecture—asymmetric write architecture with redundant blocks (AWARE)—that can improve the write latency by taking advantage of the asymmetric write characteristics of 1T-1MTJ STT-MRAM bit-cells. Due to the nature of the storage element in STT-MRAM, the time required for the two-state transitions ($1to 0$ and $0to 1$) is not identical. In other words, one of the state transitions is slower than the other direction. In conventional cache architecture, the overall write latency is limited by the slower transition. However, the AWARE cache design introduces redundant blocks in each row, and they are preset to the initial state that enables the faster transition. Hence the write operations performed in these redundant blocks are much faster than the conventional write scheme. The write latency in AWARE is improved by 30% over conventional cache architecture with no area penalty in the data array. Moreover, the additional tag bits introduced in this technique result in ${<}{1%}$ penalty on the total cache area. In addition, the write energy increases modestly by 7% in the proposed cache design. However, this write-energy increase can be mitigated by sacrificing the cache capacity.
机译:自旋转移力矩磁性RAM(STT-MRAM)由于其高密度和非易失性而成为一种用于低级高速缓存的有前途的存储技术。但是,高写入延迟是其被广泛用作未来片上存储器的瓶颈。在本文中,我们提出了一种新的缓存体系结构-具有冗余块(AWARE)的非对称写入体系结构-可以通过利用1T-1MTJ STT-MRAM位单元的非对称写入特性来改善写入延迟。由于STT-MRAM中存储元件的性质,两种状态转换($ 1到0 $和$ 0到1 $)所需的时间不相同。换句话说,状态转变之一慢于另一方向。在传统的高速缓存体系结构中,总写入延迟受较慢的转换限制。但是,AWARE缓存设计在每行中引入了冗余块,并且它们已预设为初始状态,从而可以更快地进行转换。因此,在这些冗余块中执行的写操作比常规的写方案要快得多。与传统的高速缓存体系结构相比,AWARE中的​​写入延迟提高了30%,而数据阵列中没有面积损失。此外,此技术中引入的其他标记位会导致总缓存区域减少$ {<} {1%} $。此外,在建议的缓存设计中,写入能量会适度增加7%。但是,可以通过牺牲高速缓存容量来减轻这种写能量的增加。

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