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Quantitative evaluation of sputtering induced surface roughness in depth profiling of polycrystalline multilayers using Auger electron spectroscopy

机译:使用俄歇电子能谱法定量评估多晶多层材料深度剖析中溅射引起的表面粗糙度

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Ion sputtering induced roughness during depth profiling of polycrystalline Ni/Cr multilayers using Auger electron spectroscopy (AES) was evaluated by fitting calculated depth profiles to measured ones. The model used for calculation of the depth profile as can be observed upon sputtering accounts for the broadening ('smearing') upon AES depth profiling owing to the effects of atomic mixing, surface roughness, escape depth of the Auger electrons, and preferential sputtering. The depth resolution of the measured AES depth profile was calculated directly from the values determined for the fitting parameters in the model. The depth profile recorded from a stationary Ni/Cr multilayered specimen was fitted by assuming, additionally, that the ion sputtering induced roughness increases with the sputter depth, keeping the other fitting parameters (depth independent) equal to those determined for a rotating specimen.
机译:通过使用计算的深度剖面拟合到测量的深度剖面,评估了使用俄歇电子能谱(AES)在多晶Ni / Cr多层膜深度剖面过程中离子溅射引起的粗糙度。由于原子混合,表面粗糙度,俄歇电子的逸出深度和优先溅射的影响,溅射时可以观察到的用于计算深度分布的模型解释了AES深度分布的加宽(“拖尾”)。直接从为模型中的拟合参数确定的值中计算出测得的AES深度轮廓的深度分辨率。另外,通过假设离子溅射引起的粗糙度随溅射深度的增加而拟合从固定的Ni / Cr多层样品记录的深度轮廓,同时保持其他拟合参数(与深度无关)等于为旋转样品确定的参数。

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