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Inter-Modulated Regenerative CMOS Receivers Operating at 349 and 495 GHz for THz Imaging Applications

机译:在349和495 GHz频率下运行的互调制再生CMOS接收器,用于THz成像应用

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摘要

This paper introduces an ultra-high frequency inter-modulated regenerative receiver (IRR) that operates beyond the maximum oscillation frequency (${f}_{max}$) of active devices for terahertz imaging applications. It is accomplished by inter-modulating the fundamental oscillator in a conventional super regenerative receiver (SRR) with a second oscillator to boost the reception frequency. When implemented in 65 nm CMOS technology (${f}_{max} =280$ GHz), a maximum reception frequency of 349 GHz is achieved. While in 40 nm CMOS technology (${f}_{max} =350$ GHz), the maximum reception frequency increases to 495 GHz. Multiple received bands are also generated at the alternate inter-modulation frequencies, and enable the possibility of false color THz imaging. The prototype IRR consumes 18.2 mW/pixel and occupies 0.021 mm$^{2}$ of silicon area when implemented in 65 nm CMOS technology; and occupies 0.11 mm$^{2}$ while consuming 5.6 mW when implemented in 40 nm CMOS technology.
机译:本文介绍了一种超高频互调再生接收器(IRR),其工作频率超过了太赫兹成像应用中有源器件的最大振荡频率($ {f} _ {max} $)。这是通过在传统的超再生接收器(SRR)中将基本振荡器与第二个振荡器互调来提高接收频率来实现的。当采用65 nm CMOS技术($ {f} _ {max} = 280 $ GHz)实施时,可实现349 GHz的最大接收频率。在40 nm CMOS技术中($ {f} _ {max} = 350 $ GHz),最大接收频率增加到495 GHz。在交替的互调频率处也会产生多个接收频带,并可能产生伪彩色THz成像。当采用65 nm CMOS技术实现时,原型IRR的功耗为18.2 mW /像素,占用的硅面积为0.021 mm ^ {2} $。当采用40 nm CMOS技术实现时,功耗仅为0.11 mm ^ {2} $,而功耗为5.6 mW。

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