首页> 外文期刊>Terahertz Science and Technology, IEEE Transactions on >A Compact 281–319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers
【24h】

A Compact 281–319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers

机译:紧凑型281-319 GHz低功耗下变频器MMIC用于超差异差距通讯接收器

获取原文
获取原文并翻译 | 示例
           

摘要

This article presents a fully integrated first downconversion stage for a superheterodyne receiver for high data rate communication at 300 GHz. It comprises a frequency multiplier-by-three, an active dual-gate downconverter, and an LNA. The chip was fabricated in a 35-nm InGaAs-based metamorphic high-electron-mobility transistor technology. The downconverter was designed to be used for different local oscillator (LO) frequencies between 70 and 80 GHz and intermediate frequency (IF) frequencies from 65 to 95 GHz, to create multiple channels for real-time full-duplex communication in the terahertz region. It achieves a conversion gain of 14 dB without IF amplification and 3-dB bandwidth of 25 GHz in the desired upper sideband from 288 to 313 GHz and an estimated NF of 6.6 dB. Without the LNA, the conversion gain of the circuit is -10 dB and it shows 3-dB bandwidth of 38 GHz in a frequency range from 281 to 319 GHz. Finally, the millimeter-wave monolithic integrated circuit (MMIC) will be compared in detail to a similar state-of-the-art downconverter using a resistive mixer and a necessary additional LO buffer stage in the same technology targeting the identical application. While exhibiting a better conversion gain and bandwidth and occupying only 40% of chip area, the presented downconverter consumes 70% less dc power than the MMIC with a resistive mixer.
机译:本文介绍了300 GHz的高数据速率通信的超差异Ovityne接收器的完全集成的第一下变频阶段。它包括乘数乘法器 - 三个,有源双栅极下变频器和LNA。该芯片以35nm的基于InGaAs的变质高电子移动晶体管技术制造。下变频器被设计用于从65到95GHz的70和80 GHz和中频(IF)频率之间的不同本地振荡器(LO)频率,以在太赫兹区域中创建多个通道进行实时全双工通信。它实现了14 dB的转换增益,如果放大和3-DB带宽在所需的上部边带中的放大和3-DB带宽从288到313GHz的估计NF为6.6 dB。在没有LNA的情况下,电路的转换增益为-10 dB,它在281至319GHz的频率范围内显示33dB带宽。最后,将使用电阻混频器和必要的额外的LO缓冲阶段将毫米波整体集成电路(MMIC)详细比较至相似的最先进的下变频器,以及在靶向相同的应用的同一技术中。在展示更好的转换增益和带宽和占用40%的芯片面积的同时,所示的下变频器比具有电阻混频器的MMIC消耗70%的直流电源。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号