SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS

Victor P. Makhniy; V. V. Melnyk; Yu. V. Vorobiev

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SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS

机译：基于宽带隙半导体的表面阻挡紫外探测器

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摘要

We report on successful development of surface-barrier diodes based on zinc selenide. The use carrier injection amplification allowed improvement of device sensitivity up to amplification coefficient of 20 A/W at wavelength of 0.25 μm.

机译：我们报告成功开发了基于硒化锌的表面势垒二极管。使用载流子注入放大技术可以在0.25μm的波长下将器件灵敏度提高到20 A / W的放大系数。

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来源
《Telecommunications and Radio Engineering》 |2018年第19期|1729-1733|共5页
作者
Victor P. Makhniy; V. V. Melnyk; Yu. V. Vorobiev;
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作者单位

Yuri Fedkovych Chernivtsi National University;

Yuriy Fedkovych Chernivtsi National University;

Centro de Investigaciony de Estudios Avanzados del IPW (CINVESTAN) Queretaro;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
ultraviolet (UV); zinc selenide; surface-barrier diode; high sensitivity;

机译：紫外线;硒化锌;表面阻挡二极管;高灵敏度;

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SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS

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