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Role of coupling between surface orbitals in SOC enhanced spin splitting

机译:表面轨道之间的耦合在SOC增强自旋分裂中的作用

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In this study we investigate the role of coupling between surface orbitals in a giant spin splitting (GSS) observed in the Pb/Ge(111)-1 x 1 adsorption system along Gamma - M - Gamma'. We report, based on the density functional theory that, the magnitude of the GSS depends on the bonding structure of the Pb/Ge interface, varying from 242 to 667 meV for the metallic surface bands. The splitting is shown to be SOC enhanced, with similar to 93% of the effect being of SOC origin. The split-energy difference observed in the system is a result of a different coupling strength between p(x)/p(y)(Pb) and p(z)(Pb) orbitals, which produces corresponding values of unquenched orbital angular momentum. The described spin-split pattern corresponds to those observed in Tl/Si(111)-1 x 1, Bi/Si(111)-(root 3 x root 3)R30 degrees, and 4/3ML Pb/Ge(111)-(root 3 x root 3)R30 degrees, which suggests that, their GSS may also be SOC enhanced.
机译:在这项研究中,我们研究了在沿Gamma-M-Gamma'的Pb / Ge(111)-1 x 1吸附系统中观察到的巨大自旋分裂(GSS)中的表面轨道之间的耦合作用。我们基于密度泛函理论报告说,GSS的大小取决于Pb / Ge界面的键合结构,对于金属表面带,其变化范围为242至667 meV。分裂显示为SOC增强,其效果的93%来自SOC。在系统中观察到的分裂能量差异是p(x)/ p(y)(Pb)和p(z)(Pb)轨道之间耦合强度不同的结果,该耦合强度会产生未淬灭的轨道角动量的相应值。所描述的自旋分裂图案对应于在T1 / Si(111)-1 x 1,Bi / Si(111)-(根3 x根3)R30度和4 / 3ML Pb / Ge(111)-中观察到的那些(根3 x根3)R30度,这表明它们的GSS也可能得到SOC增强。

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