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Theory of inelastic tunneling and its relation to vibrational excitation in ladder climbing processes of single adsorbates

机译:非吸附隧道理论及其与单吸附物阶梯爬升过程中的振动激励的关系

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摘要

A relation between inelastic electron tunneling (IET) current and vibrational generation rate, a key source of vibrational heating, is studied on the basis of the adsorbate-induced resonance model for inelastic electron tunneling using the coupled Dyson and kinetic equations of phonon number for the causal and statistical Keldysh-Green functions. The self-consistent solution of the kinetic equation gives the stationary nonequilibrium vibrational distribution function, from which a general formula for the vibrational heating is derived. A physical explanation of a relation between the elementary processes for inelastic electron tunneling and vibrational excitation is demonstrated. Based on the numerical calculations including the self-consistently determined vibrational distribution function and the vibrational density of states, the influence of vibrational relaxation due to electron-hole pair excitations and sample temperature on the IET current and on the vibrational generation rate is discussed with a primary attention to a possible deviation from a simple power-law dependence of the reaction rate in the vicinity of the threshold for the adsorbate motion. It is found that the temperature broadening appears to be confined near the threshold voltage, whereas the lifetime broadening manifests itself in a much wider region of applied voltage below the threshold.
机译:在非弹性电子隧穿的吸附物诱导共振模型的基础上,利用耦合的戴森和声子数动力学方程,研究了非弹性电子隧穿(IET)电流与振动产生的关键源-振动产生速率之间的关系。因果和统计Keldysh-Green函数。动力学方程的自洽解给出了平稳的非平衡振动分布函数,由此得出了振动加热的一般公式。说明了非弹性电子隧穿的基本过程与振动激发之间关系的物理解释。基于包括自洽确定的振动分布函数和状态振动密度在内的数值计算,讨论了由电子-空穴对激发和样品温度引起的振动弛豫对IET电流和振动产生率的影响。首先要注意的是,在被吸附物运动的阈值附近,有可能偏离反应速率的简单幂律依赖性。发现温度展宽似乎被限制在阈值电压附近,而寿命展宽则在低于阈值的外加电压范围内表现出来。

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