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An ab initio study of 3-aminopropyltrimethoxysilane molecule on Si(111)-(3~(1/2) × 3~(1/2)) surface

机译:Si(111)-(3〜(1/2)×3〜(1/2))表面上的3-氨丙基三甲氧基硅烷分子的从头算研究

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摘要

The chemisorption and reaction of 3-aminopropyltrimethoxysilane (APTS) molecule on the Si(111)-(3~(1/2) × 3~(1/2)) surface are investigated by first principles density-functional calculations within the generalized gradient approximation. Before studying the chemisorption of APTS molecule on the surface, we have firstly put three -OH groups on the silicon surface, but considering six different locations for H and O atoms. Upon their relaxations, model II, which is assumed to be crosswise for initial orientation of-OH groups, was found to be energetically more favorable than the others. In model II, after the relaxation, its conformation was transformed to skewed structure due to the repulsive forces between -OH groups. Isolated APTS molecule was also investigated in order to obtain its most stable molecular geometry, for which the HOMO-LUMO gap was found to be 4.41 eV. In addition to these, after the energetically most favorable hydroxylated Si(111) surface was calculated, APTS molecule was chemisorbed on the surface by means of liberating its methoxy groups. In our model for the binding of APTS molecule on the Si(111) surface, the silicon atom in the APTS forms three bonds to hydro-xyl groups at the surface.
机译:通过第一性原理在广义梯度内的密度泛函计算研究了3-氨基丙基三甲氧基硅烷(APTS)分子在Si(111)-(3〜(1/2)×3〜(1/2))表面上的化学吸附和反应。近似。在研究APTS分子在表面上的化学吸附之前,我们首先在硅表面上放置了三个-OH基,但是考虑到H和O原子的六个不同位置。在其松弛之后,发现模型II被认为在能量上比其他模型更有利,模型II对于-OH基团的初始取向是横向的。在模型II中,松弛后,由于-OH基团之间的排斥力,其构象转变为偏斜结构。为了获得最稳定的分子几何形状,还研究了分离的APTS分子,其HOMO-LUMO缺口为4.41 eV。除此之外,在计算出能量上最有利的羟基化Si(111)表面后,APTS分子通过释放其甲氧基而化学吸附在表面上。在我们的APTS分子在Si(111)表面结合的模型中,APTS中的硅原子与表面的羟基形成三个键。

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